ISL12022MIBZ datasheet(3/27 Pages) INTERSIL

Part #	ISL12022MIBZ

Description	Real Time Clock with Embedded Crystal, 짹5ppm Accuracy

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Manufacturer	INTERSIL [Intersil Corporation]

Direct Link	http://www.intersil.com/cda/home

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3 / 27 page

3

FN6668.4

December 18, 2008

Absolute Maximum Ratings

Thermal Information

Voltage on VDD, VBAT, SCL, SDA, and IRQ/FOUT pins

(Respect to Ground). . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 6.0V

ESD Rating

Human Body Model (Per MIL-STD-883 Method 3014) . . . . .>3kV

Machine Model . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .>300V

Thermal Resistance (Typical, Note 1)

θJA (°C/W)

20 Lead SOIC . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . -40°C to +85°C

Pb-Free Reflow Profile (Note 2). . . . . . . . . . . . . . . . . .see link below

http://www.intersil.com/pbfree/Pb-FreeReflow.asp

CAUTION: Do not operate at or near the maximum ratings listed for extended periods of time. Exposure to such conditions may adversely impact product reliability and

result in failures not covered by warranty.

NOTES:

1.

θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

2. The ISL12022M Oscillator Initial Accuracy can change after solder reflow attachment. The amount of change will depend on the reflow

temperature and length of exposure. A general rule is to use only one reflow cycle and keep the temperature and time as short as possible.

Changes on the order of ±1ppm to ±3ppm can be expected with typical reflow profiles.

DC Operating Characteristics - RTC

Test Conditions: VDD = +2.7 to +5.5V, TA = -40°C to +85°C, unless otherwise stated.

SYMBOL

PARAMETER

CONDITIONS

MIN

(Note 10)

TYP

(Note 6)

MAX

(Note 10)

UNITS

NOTES

VDD

Main Power Supply

2.7

5.5

V

VBAT

Battery Supply Voltage

1.8

5.5

V

3

IDD1

Supply Current. (I2C Not Active,

Temperature Conversion Not Active, FOUT

Not Active)

VDD = 5V

4.1

7

µA

4, 5

VDD = 3V

3.5

6

µA

4, 5

IDD2

Supply Current. (I2C Active, Temperature

Conversion Not Active, Fout Not Active)

VDD = 5V

200

500

µA

4, 5

IDD3

Supply Current. (I2C Not Active,

Temperature Conversion Active, FOUT Not

Active)

VDD = 5V

120

400

µA

4, 5

IBAT

Battery Supply Current

VDD = 0V, VBAT = 3V, TA = +25°C

1.0

1.6

µA

4

VDD = 0V, VBAT = 3V

1.0

5.0

µA

4

IBATLKG

Battery Input Leakage

VDD = 5.5V, VBAT = 1.8V

100

nA

ILI

Input Leakage Current on SCL

VIL = 0V, VIH = VDD

-1.0

±0.1

1.0

µA

ILO

I/O Leakage Current on SDA

VIL = 0V, VIH = VDD

-1.0

±0.1

1.0

µA

VBATM

Battery Level Monitor Threshold

-100

+100

mV

VPBM

Brownout Level Monitor Threshold

-100

+100

mV

VTRIP

VBAT Mode Threshold

2.0

2.2

2.4

V

VTRIPHYS VTRIP Hysteresis

30

mV

8

VBATHYS VBAT Hysteresis

50

mV

8

ΔFout

T

Oscillator Stability vs Temperature

VDD = 3.3V

-5

+5

ppm

2

ΔFoutV

Oscillator Stability vs Voltage

2.7V

≤ VDD ≤ 5.5V

-3

+3

ppm

ΔFoutI

Oscillator Initial Accuracy

VDD = 3.3V

-3

+3

ppm

2

Temp

Temperature Sensor Accuracy

VDD = VBAT = 3.3V

±2

°C

8

IRQ/FOUT (OPEN DRAIN OUTPUT)

VOL

Output Low Voltage

VDD = 5V, IOL = 3mA

0.4

V

VDD = 2.7V, IOL = 1mA

0.4

V

ISL12022M

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