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AT45DB081D-MU-SL955 Datasheet(PDF) 1 Page - ATMEL Corporation |
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AT45DB081D-MU-SL955 Datasheet(HTML) 1 Page - ATMEL Corporation |
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1 / 53 page  Features • Single 2.5V or 2.7V to 3.6V Supply • RapidS® Serial Interface: 66 MHz Maximum Clock Frequency – SPI Compatible Modes 0 and 3 • User Configurable Page Size – 256 Bytes per Page – 264 Bytes per Page – Page Size Can Be Factory Pre-configured for 256 Bytes • Page Program Operation – Intelligent Programming Operation – 4,096 Pages (256/264 Bytes/Page) Main Memory • Flexible Erase Options – Page Erase (256 Bytes) – Block Erase (2 Kbytes) – Sector Erase (64 Kbytes) – Chip Erase (8 Mbits) • Two SRAM Data Buffers (256/264 Bytes) – Allows Receiving of Data while Reprogramming the Flash Array • Continuous Read Capability through Entire Array – Ideal for Code Shadowing Applications • Low-power Dissipation – 7 mA Active Read Current Typical – 25 µA Standby Current Typical – 5 µA Deep Power Down Typical • Hardware and Software Data Protection Features – Individual Sector • Sector Lockdown for Secure Code and Data Storage – Individual Sector • Security: 128-byte Security Register – 64-byte User Programmable Space – Unique 64-byte Device Identifier • JEDEC Standard Manufacturer and Device ID Read • 100,000 Program/Erase Cycles Per Page Minimum • Data Retention – 20 Years • Industrial Temperature Range • Green (Pb/Halide-free/RoHS Compliant) Packaging Options 1. Description The AT45DB081D is a 2.5V or 2.7V, serial-interface Flash memory ideally suited for a wide variety of digital voice-, image-, program code- and data-storage applications. The AT45DB081D supports RapidS serial interface for applications requiring very high speed operations. RapidS serial interface is SPI compatible for frequencies up to 66 MHz. Its 8,650,752 bits of memory are organized as 4,096 pages of 256 bytes or 264 bytes each. In addition to the main memory, the AT45DB081D also contains two SRAM buffers of 256/264 bytes each. The buffers allow the receiving of data while a page in the main Memory is being reprogrammed, as well as writing a continuous data stream. EEPROM emulation (bit or byte alterability) is easily handled with a self- contained three step read-modify-write operation. Unlike conventional Flash memo- ries that are accessed randomly with multiple address lines and a parallel interface, 8-megabit 2.5-volt or 2.7-volt DataFlash® AT45DB081D 3596I–DFLASH–4/08 |
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