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PSMN3R5-30YL Datasheet(PDF) 7 Page - NXP Semiconductors |
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PSMN3R5-30YL Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page PSMN3R5-30YL_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 14 October 2008 7 of 13 NXP Semiconductors PSMN3R5-30YL N-channel TrenchMOS logic level FET Fig 9. Forward transconductance as a function of drain current; typical values Fig 10. Gate-source threshold voltage as a function of junction temperature Fig 11. Sub-threshold drain current as a function of gate-source voltage Fig 12. Drain-source on-state resistance as a function of drain current; typical values 003aac718 40 60 80 100 120 0 1020 3040 50 ID (A) gfs (S) 15 Tj (°C) -60 180 120 060 003aab272 1 2 3 0.5 1.5 VGS(th) (V) 0 max typ min 003aab271 10−4 10−5 10−3 ID (A) 10−6 VGS (V) 0 2.5 2 1 1.5 0.5 typ max min 003aac707 2 3 4 5 6 0 20 40 60 80 100 ID (A) RDSon (m Ω) VGS (V) = 3.2 10 4.5 |
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