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PSMN3R5-30YL Datasheet(PDF) 5 Page - NXP Semiconductors |
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PSMN3R5-30YL Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 13 page PSMN3R5-30YL_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 14 October 2008 5 of 13 NXP Semiconductors PSMN3R5-30YL N-channel TrenchMOS logic level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =250 µA; VGS =0V; Tj =25°C 30 - - V ID =250 µA; VGS =0V; Tj =-55 °C 27 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS = VGS; Tj =25°C; see Figure 10; see Figure 11 1.3 1.7 2.15 V ID =1mA; VDS = VGS; Tj = 150 °C; see Figure 10 0.65 - - V ID =1mA; VDS = VGS; Tj =-55 °C; see Figure 10 --2.45 V IDSS drain leakage current VDS =30V; VGS =0V; Tj = 25 °C --1 µA VDS =30V; VGS =0V; Tj = 150 °C - - 100 µA IGSS gate leakage current VGS =16V; VDS =0V; Tj = 25 °C - - 100 nA VGS =-16 V; VDS =0V; Tj = 25 °C - - 100 nA RDSon drain-source on-state resistance VGS =4.5 V; ID =15A; Tj = 25 °C; see Figure 12 - 3.18 5.6 m Ω VGS =10V; ID =15A; Tj = 150 °C; see Figure 13 --6 m Ω VGS =10V; ID =15A; Tj =25°C; see Figure 12 -2.2 3.5 m Ω RG gate resistance f = 1 MHz - 0.53 - Ω Dynamic characteristics QG(tot) total gate charge ID =10A; VDS =12V; VGS = 4.5 V; see Figure 14; see Figure 15 -19 - nC ID =0A; VDS =0V; VGS =10V - 37 - nC ID =10A; VDS =12V; VGS =10V; see Figure 14; see Figure 15 -41 - nC QGS gate-source charge ID =10A; VDS =12V; VGS = 4.5 V; see Figure 14; see Figure 15 -6 - nC QGS(th) pre-threshold gate-source charge -4 - nC QGS(th-pl) post-threshold gate-source charge -2 - nC QGD gate-drain charge - 5 - nC VGS(pl) gate-source plateau voltage VDS =12V; see Figure 14; see Figure 15 -2.4 - V Ciss input capacitance VDS =12V; VGS = 0 V; f = 1 MHz; Tj =25°C; see Figure 16 - 2458 - pF Coss output capacitance - 532 - pF Crss reverse transfer capacitance - 252 - pF td(on) turn-on delay time VDS =12V; RL =0.5 Ω; VGS =4.5 V; RG(ext) =4.7 Ω -33 - ns tr rise time - 50 - ns td(off) turn-off delay time - 45 - ns tf fall time - 18 - ns |
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