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PESD3V3S2UQ Datasheet(PDF) 7 Page - NXP Semiconductors |
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PESD3V3S2UQ Datasheet(HTML) 7 Page - NXP Semiconductors |
7 / 13 page NXP Semiconductors Product specification Double ESD protection diodes in SOT663 package PESDxS2UQ series VR (V) 05 4 23 1 001aaa727 120 160 80 200 240 Cd (pF) 40 (1) (2) Fig.6 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25 °C; f = 1 MHz. (1) PESD3V3S2UQ; VRWM = 3.3 V. (2) PESD5V0S2UQ; VRWM =5V. VR (V) 025 20 10 15 5 001aaa728 20 30 10 40 50 Cd (pF) 0 (1) (3) (2) Fig.7 Diode capacitance as a function of reverse voltage; typical values. Tamb = 25 °C; f = 1 MHz. (1) PESD12VS2UQ; VRWM =12V. (2) PESD15VS2UQ; VRWM =15V. (3) PESD24VS2UQ; VRWM =24V. Rev. 03 - 11 September 2008 7 of 13 |
Similar Part No. - PESD3V3S2UQ |
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Similar Description - PESD3V3S2UQ |
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