PBHV8115T_08 datasheet(6/12 Pages) NXP

Part #	PBHV8115T

Description	150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

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Manufacturer	NXP [NXP Semiconductors]

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6 / 12 page

PBHV8115T_2

Product data sheet

Rev. 02 — 9 December 2008

6 of 12

NXP Semiconductors

PBHV8115T

150 V, 1 A NPN high-voltage low VCEsat (BISS) transistor

VCE =10V

(1) Tamb = 100 °C

(2) Tamb =25 °C

(3) Tamb = −55 °C

Tamb =25 °C

Fig 3.

DC current gain as a function of collector

current; typical values

Fig 4.

Collector current as a function of

collector-emitter voltage; typical values

VCE =10V

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

IC/IB =5

(1) Tamb = −55 °C

(2) Tamb =25 °C

(3) Tamb = 100 °C

Fig 5.

Base-emitter voltage as a function of collector

current; typical values

Fig 6.

Base-emitter saturation voltage as a function

of collector current; typical values

006aab158

200

300

100

400

500

hFE

0

IC (mA)

10−1

104

103

1102

10

(2)

(1)

(3)

VCE (V)

05

4

23

1

006aab159

0.8

1.2

0.4

1.6

2.0

IC

(A)

0

270

240

210

180

150

120

IB (mA) = 300

90

60

30

006aab160

0.4

0.8

1.2

VBE

(V)

0

IC (mA)

10−1

104

103

1102

10

(2)

(1)

(3)

006aab161

0.5

0.9

1.3

VBEsat

(V)

0.1

IC (mA)

10−1

104

103

1102

10

(2)

(1)

(3)

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