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NX3L2T66GM Datasheet(PDF) 11 Page - NXP Semiconductors |
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NX3L2T66GM Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 18 page NX3L2T66_1 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 — 4 December 2008 11 of 18 NXP Semiconductors NX3L2T66 Low-ohmic single-pole single-throw analog switch [1] fi is biased at 0.5VCC. 12.3 Test circuits Qinj charge injection fi = 1 MHz; CL = 0.1 nF; RL =1 MΩ; Vgen =0V; Rgen =0 Ω; see Figure 21 VCC = 1.5 V - 3 - pC VCC = 1.8 V - 3 - pC VCC = 2.5 V - 3 - pC VCC = 3.3 V - 3 - pC Table 12. Additional dynamic characteristics …continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise specified); tr = tf ≤ 2.5 ns. Symbol Parameter Conditions 25 °C Unit Min Typ Max Fig 16. Test circuit for measuring total harmonic distortion 001aaj225 VIH VCC 0.5VCC nZ/nY nY/nZ nE fi RL D Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3dB. Fig 17. Test circuit for measuring the frequency response when channel is in ON-state 001aaj226 VIH VCC 0.5VCC nZ/nY nY/nZ nE fi RL dB |
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