NX3L1T5157GM datasheet(5/19 Pages) NXP

Part #	NX3L1T5157GM

Description	Low-ohmic single-pole double-throw switch

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Manufacturer	NXP [NXP Semiconductors]

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5 / 19 page

NX3L1T5157_1

Product data sheet

Rev. 01 — 16 September 2008

5 of 19

NXP Semiconductors

NX3L1T5157

Low-ohmic single-pole double-throw switch

11. Static characteristics

Table 7.

Static characteristics

At recommended operating conditions; voltages are referenced to GND (ground 0 V).

Symbol Parameter

Conditions

Tamb = 25 °C

Tamb = −40 °C to +125 °C

Unit

Min

Typ

Max

Min

Max

(85

°C)

Max

(125

°C)

VIH

HIGH-level

input voltage

VCC = 1.4 V to 1.6 V

0.9

-

0.9

-

V

VCC = 1.65 V to 1.95 V

0.9

-

0.9

-

V

VCC = 2.3 V to 2.7 V

1.1

-

1.1

-

V

VCC = 2.7 V to 3.6 V

1.3

-

1.3

-

V

VIL

LOW-level

input voltage

VCC = 1.4 V to 1.6 V

-

0.3

-

0.3

V

VCC = 1.65 V to 1.95 V

-

0.4

-

0.4

0.3

V

VCC = 2.3 V to 2.7 V

-

0.4

-

0.4

V

VCC = 2.7 V to 3.6 V

-

0.5

-

0.5

V

II

input leakage

current

select input S;

VI = GND to 3.6 V;

VCC = 1.4 V to 3.6 V

---

-

±0.5

±1

µA

IS(OFF)

OFF-state

leakage

current

Y0 and Y1 port;

VCC = 1.4 V to 3.6 V;

see Figure 4

--

±5-

±50

±500

nA

IS(ON)

ON-state

leakage

current

Z port;

VCC = 1.4 V to 3.6 V;

see Figure 5

--

±5-

±50

±500

nA

ICC

supply current

VI =VCC or GND;

VCC = 3.6 V;

VSW = GND or VCC

-

100

-

690

6000

nA

∆I

CC

additional

supply current

VI = 2.6 V; VCC = 3.6 V;

VSW = GND or VCC

-

0.35

0.7

-

1

µA

VI = 1.8 V; VCC = 3.6 V;

VSW = GND or VCC

-

2.5

4

-

5

µA

VI = 1.8 V; VCC = 2.5 V;

VSW = GND or VCC

-

50

200

-

300

500

nA

CI

input

capacitance

-

1.0

-

pF

CS(OFF)

OFF-state

capacitance

-35-

-

pF

CS(ON)

ON-state

capacitance

-

130

-

pF

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