MMBZ33VAL datasheet(2/15 Pages) NXP

Part #	MMBZ33VAL

Description	Double ESD protection diodes for transient overvoltage suppression

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Manufacturer	NXP [NXP Semiconductors]

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MMBZXVAL_SER_1

Product data sheet

Rev. 01 — 1 September 2008

2 of 15

NXP Semiconductors

MMBZxVAL series

Double ESD protection diodes for transient overvoltage suppression

1.4 Quick reference data

2.

Pinning information

Table 2.

Quick reference data

Tamb =25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Per diode

VRWM

reverse standoff voltage

MMBZ12VAL

MMBZ12VAL/DG

-

8.5

V

MMBZ15VAL

MMBZ15VAL/DG

--12

V

MMBZ18VAL

MMBZ18VAL/DG

-

14.5

V

MMBZ20VAL

MMBZ20VAL/DG

--17

V

MMBZ27VAL

MMBZ27VAL/DG

--22

V

MMBZ33VAL

MMBZ33VAL/DG

--26

V

Cd

diode capacitance

f = 1 MHz; VR =0V

MMBZ12VAL

MMBZ12VAL/DG

-

110

140

pF

MMBZ15VAL

MMBZ15VAL/DG

-

85

105

pF

MMBZ18VAL

MMBZ18VAL/DG

-

7090pF

MMBZ20VAL

MMBZ20VAL/DG

-

6580pF

MMBZ27VAL

MMBZ27VAL/DG

-

4860pF

MMBZ33VAL

MMBZ33VAL/DG

-

4555pF

Table 3.

Pinning

Description

Simpliﬁed outline

Graphic symbol

1

cathode (diode 1)

2

cathode (diode 2)

3

common anode

12

3

006aaa154

12

3

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MMBZ33VAL Datasheet(PDF) 2 Page - NXP Semiconductors

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