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NX3L1T3157GW Datasheet(PDF) 11 Page - NXP Semiconductors |
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NX3L1T3157GW Datasheet(HTML) 11 Page - NXP Semiconductors |
11 / 20 page NX3L1T3157_5 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 05 — 28 July 2008 11 of 20 NXP Semiconductors NX3L1T3157 Low-ohmic single-pole double-throw switch a. Test circuit b. Input and output measurement points Fig 15. Test circuit for measuring break-before-make timing 001aag571 GND VCC VEXT = 1.5 V Y0 Y1 S Z VI V VO RL CL G 001aag572 VI tb-m VO 0.9VO 0.9VO 0.5VI Test data is given in Table 11. Definitions test circuit: RL = Load resistance. CL = Load capacitance including jig and probe capacitance. VEXT = External voltage for measuring switching times. Fig 16. Load circuit for switching times 001aag642 S Z Y0 Y1 RL CL VCC GND VEXT = 1.5 V switch 1 2 VI V VO G Table 11. Test data Supply voltage Input Load VCC VI tr, tf CL RL 1.4 V to 3.6 V VCC ≤ 2.5 ns 35 pF 50 Ω |
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