BUK7508-40B datasheet(5/12 Pages) NXP

Part #	BUK7508-40B

Description	N-channel TrenchMOS standard level FET

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Manufacturer	NXP [NXP Semiconductors]

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BUK7508-40B_4

Product data sheet

Rev. 04 — 22 September 2008

5 of 12

NXP Semiconductors

BUK7508-40B

N-channel TrenchMOS standard level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =0.25mA; VGS =0V; Tj =25°C

40

-

V

ID =0.25mA; VGS =0V; Tj =-55 °C

36

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS = VGS; Tj =25°C; see

Figure 9; see Figure 10

234

V

ID =1mA; VDS = VGS; Tj =-55 °C; see

Figure 9; see Figure 10

--4.4

V

ID =1mA; VDS = VGS; Tj = 175 °C; see

Figure 9; see Figure 10

1-

-

V

IDSS

drain leakage current

VDS =40V; VGS =0V; Tj = 25 °C

-

0.02

1

µA

VDS =40V; VGS =0V; Tj = 175 °C

-

500

µA

IGSS

gate leakage current

VDS =0V; VGS =20V; Tj = 25 °C

-

2

100

nA

VDS =0V; VGS =-20 V; Tj = 25 °C

-

2

100

nA

RDSon

drain-source on-state

resistance

VGS =10V; ID =25A; Tj = 175 °C; see

Figure 11; see Figure 12

--15.2

m

Ω

VGS =10V; ID =25A; Tj =25°C; see

Figure 11; see Figure 12

-6.6

8

m

Ω

Dynamic characteristics

QG(tot)

total gate charge

ID =25A; VDS =32V; VGS =10V;

Tj =25°C; see Figure 14

-36

-

nC

QGS

gate-source charge

-

9

-

nC

QGD

gate-drain charge

-

12

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V; f=1MHz;

Tj =25°C; see Figure 15

-

2017

2689

pF

Coss

output capacitance

-

486

583

pF

Crss

reverse transfer

capacitance

-

213

291

pF

td(on)

turn-on delay time

VDS =30V; RL =1.2 Ω; VGS =10V;

RG(ext) =10 Ω; Tj =25 °C

-20

-

ns

tr

rise time

-

51

-

ns

td(off)

turn-off delay time

-

20

-

ns

tf

fall time

-

33

-

ns

LD

internal drain

inductance

from drain lead 6 mm from package to

centre of die; Tj =25°C

-4.5

-

nH

from contact screw on mounting base to

centre of die; Tj =25°C

-3.5

-

nH

LS

internal source

inductance

from source lead 6 mm from package to

source bond pad; Tj =25°C

-7.5

-

nH

Source-drain diode

VSD

source-drain voltage

IS =25A; VGS =0V; Tj = 25 °C; see

Figure 13

-

0.85

1.2

V

trr

reverse recovery time

IS =20A; dIS/dt = -100 A/µs; VGS =-10 V;

VDS =20V; Tj =25°C

-53

-

ns

Qr

recovered charge

-

44

-

nC

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