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BLF878 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BLF878 Datasheet(HTML) 2 Page - NXP Semiconductors |
2 / 18 page BLF878_1 © NXP B.V. 2008. All rights reserved. Preliminary data sheet Rev. 01 — 15 December 2008 2 of 18 NXP Semiconductors BLF878 UHF power LDMOS transistor I Integrated ESD protection I Advanced flange material for optimum thermal behavior and reliability I Excellent ruggedness I High power gain I High efficiency I Designed for broadband operation (470 MHz to 860 MHz) I Excellent reliability I Internal input and output matching for high gain and optimum broadband operation I Easy power control I Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Communication transmitter applications in the UHF band I Industrial applications in the UHF band 2. Pinning information [1] Connected to flange. 3. Ordering information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 drain1 2 drain2 3 gate1 4 gate2 5 source [1] 5 2 4 1 3 4 3 5 1 2 sym117 Table 3. Ordering information Type number Package Name Description Version BLF878 - flanged LDMOST ceramic package; 2 mounting holes; 4 leads SOT979A |
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