BLF6G27S-45 datasheet(4/16 Pages) NXP

Part #	BLF6G27S-45

Description	WiMAX power LDMOS transistor

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Manufacturer	NXP [NXP Semiconductors]

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BLF6G27-45_BLF6G27S-45_3

Product data sheet

Rev. 03 — 15 December 2008

4 of 16

NXP Semiconductors

BLF6G27-45; BLF6G27S-45

WiMAX power LDMOS transistor

7.2 Single carrier N-CDMA performance

VDS =28V; IDq = 350 mA; f = 2600 MHz; single carrier

N-CDMA; PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz;

instantaneous bandwidth = 30 kHz.

VDS = 28 V; IDq = 350 mA; f = 2600 MHz; single carrier

N-CDMA; PAR = 9.7 dB at 0.01 % probability;

channel bandwidth = 1.23 MHz;

instantaneous bandwidth = 30 kHz.

(1) Low frequency component

(2) High frequency component

Fig 1.

Power gain and drain efﬁciency as functions of

average load power; typical values

Fig 2.

Adjacent channel power ratio as function of

average load power; typical values

001aah406

PL(AV) (W)

10−1

102

10

1

16

18

14

20

22

Gp

(dB)

12

20

30

10

40

50

ηD

(%)

0

Gp

ηD

PL(AV) (W)

10−1

102

10

1

001aah407

−60

−50

−70

−40

−30

ACPR

(dBc)

−80

ACPR1980k

ACPR1500k

ACPR885k

(1)

(2)

(1)

(2)

(1)

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BLF6G27S-45 Datasheet(PDF) 4 Page - NXP Semiconductors

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