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BLF6G27-45 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF6G27-45 Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 16 page BLF6G27-45_BLF6G27S-45_3 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 03 — 15 December 2008 5 of 16 NXP Semiconductors BLF6G27-45; BLF6G27S-45 WiMAX power LDMOS transistor 7.3 Two-tone VDS =28V; f1 = 2598.75 MHz; f2 = 2601.25 MHz; 2.5 MHz tone spacing. (1) IDq = 250 mA (2) IDq = 300 mA (3) IDq = 350 mA (4) IDq = 400 mA (5) IDq = 500 mA VDS = 28 V; f1 = 2598.75 MHz; f2 = 2601.25 MHz; 2.5 MHz tone spacing. (1) IDq = 250 mA (2) IDq = 300 mA (3) IDq = 350 mA (4) IDq = 400 mA (5) IDq = 500 mA Fig 3. Power gain as function of peak envelope load power; typical values Fig 4. Third order intermodulation distortion as function of peak envelope load power; typical values 001aah408 17.5 18.5 19.5 Gp (dB) 16.5 PL(PEP) (W) 1102 10 (5) (4) (3) (2) (1) 001aah409 −45 −35 −55 −25 −15 IMD3 (dBc) −65 PL(PEP) (W) 1102 10 (1) (2) (5) (3) (4) |
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