Electronic Components Datasheet Search |
|
TMMDB3TG Datasheet(PDF) 2 Page - STMicroelectronics |
|
TMMDB3TG Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 4 page TMMDB3TG 2/4 Symbol Parameter Test Conditions Value Unit VBO Breakover voltage * C = 22nF ** MIN. 30 V TYP. 32 MAX. 34 IVBO1 -VBO2 I Breakover voltage symmetry C = 22nF ** MAX. ± 2 V ∆ V Dynamic breakover voltage * VBO and VF at 10mA MIN. 9 V VO Output voltage * see diagram 2 (R=20 Ω) MIN. 5 V IBO Breakover current * C = 22nF ** MAX. 15 µA tr Rise time * see diagram 3 MAX. 2 µs IR Leakage current * VR = 0.5 VBO max MAX. 10 µA * Applicable to both forward and reverse directions. ** Connected in parallel to the device. ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) TMM DB 3 TG Special V range BO Breakover voltage 3: V typ = 32V BO Diac Series MINIMELF ORDERING INFORMATION Part Number Marking Weight Base Quantity Packing Mode TMMDB3TG (None) 0.04 g 2500 Tape & Reel OTHER INFORMATION |
Similar Part No. - TMMDB3TG |
|
Similar Description - TMMDB3TG |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |