 |
Electronic Components Datasheet Search |
|
|
Electronic Components Datasheet Search |
|
T90RIA60 Datasheet(PDF) 2 Page - Vishay Siliconix |
|
||||||||||||||||||||||||||||||
T90RIA60 Datasheet(HTML) 2 Page - Vishay Siliconix |
|
|
2 / 12 page  www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 93756 2 Revision: 03-Jun-08 T..RIA Series Vishay High Power Products Medium Power Phase Control Thyristors (Power Modules), 50 A/70 A/90 A ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS T50RIA T70RIA T90RIA UNITS Maximum average on-state current at case temperature IT(AV) 180° conduction, half sine wave 50 70 90 A 70 70 70 °C Maximum RMS on-state current IT(RMS) 80 110 141 A Maximum peak, one-cycle on-state, non-repetitive surge current ITSM t = 10 ms No voltage reapplied Sine half wave, initial TJ = TJ maximum 1310 1660 1780 A t = 8.3 ms 1370 1740 1870 t = 10 ms 100 % VRRM reapplied 1100 1400 1500 t = 8.3 ms 1150 1460 1570 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 8550 13 860 15 900 A2s t = 8.3 ms 7800 12 650 14 500 t = 10 ms 100 % VRRM reapplied 6050 9800 11 250 t = 8.3 ms 5520 8950 10 270 Maximum I2 √t for fusing I2 √t t = 0.1 to 10 ms, no voltage reapplied 85 500 138 500 159 100 A2 √s Low level value of threshold voltage VT(TO)1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ maximum 0.97 0.77 0.78 V High level value of threshold voltage VT(TO)2 (I > π x I T(AV)), TJ maximum 1.13 0.88 0.88 Low level value of on-state slope resistance rt1 (16.7 % x π x I T(AV) < I < π x IT(AV)), TJ maximum 4.1 3.6 2.9 m Ω High level value of on-state slope resistance rt2 (I > π x I T(AV)), TJ maximum 3.3 3.2 2.6 Maximum on-state voltage drop VTM ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.60 1.55 1.55 V Maximum forward voltage drop VFM ITM = π x IT(AV), TJ = 25 °C, tp = 400 µs square Average power = VT(TO) x IT(AV) + rf x (IT(RMS))2 1.60 1.55 1.55 V Maximum holding current IH Anode supply = 6 V, initial IT = 30 A, TJ = 25 °C 200 200 200 mA Maximum latching current IL Anode supply = 6 V, resistive load = 10 Ω Gate pulse: 10 V, 100 µs, TJ = 25 °C 400 400 400 SWITCHING PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Typical turn-on time tgd TJ = 25 °C, Vd = 50 % VDRM, ITM = 50 A Ig = 500 mA, tr ≤ 0.5, tp ≥ 6 µs 0.9 µs Typical reverse recovery time trr TJ = 125 °C, ITM = 50 A, tp = 300 µs, dI/dt = 10 A/µs 3 Typical turn-off time tq TJ = TJ maximum, ITM = 50 A, tp = 300 µs -dI/dt = 15 A/µs, VR = 100 V, linear to 80 % VDRM 110 |
Similar Part No. - T90RIA60 |
|
Similar Description - T90RIA60 |
|
|
|
Link URL |
| Privacy Policy |
| ALLDATASHEET.COM |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
