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THD215HI Datasheet(PDF) 2 Page - STMicroelectronics |
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THD215HI Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 6 page THERMAL DATA Rthj-ca se Thermal Resistance Junction-case Max 2.2 oC/W ELECTRICAL CHARACTERISTICS (Tcase =25 oC unless otherwise specified) Symb ol Parameter Test Cond ition s Mi n. Typ . Max. Un it ICEO Collect or Cut-off Current (IB =0) VCE =700 V 10 µA ICES Collect or Cut-off Current (VBE =0) VCE =1500 V 10 µA IEBO Emitt er Cut-off Current (IC =0) VEB =5 V 100 µA VCEO(sus ) ∗ Collector-Emitter Sustaining Voltage (IB =0) IC = 100 mA 700 V VCE(sat) ∗ Collector-Emitter Saturat ion Voltage IC =6 A IB = 1.2 A 1.3 V VBE(s at) ∗ Base-Emitter Saturat ion Voltage IC =6 A IB = 1.2 A 1.3 V hFE ∗ DC Current G ain IC =10 mA VCE =5 V IC =6 A VCE =5 V IC =6 A VCE =5 V Tj = 125 oC 10 6 4 13 ts tf INDUCTIVE LOAD St orage Time Fall T ime IC =4.5 A f =64 KHz IB1 =1.5 A IB2 =-2.4 A Vc eflybac k = 1100 sin π 5 10 6 tV 3.3 160 µs ns ∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % Safe Operating Area Thermal Impedance THD215HI 2/6 |
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