THD215HI datasheet(2/6 Pages) STMICROELECTRONICS

Part #	THD215HI

Description	HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

2.2

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEO

Collect or Cut-off

Current (IB =0)

VCE =700 V

10

µA

ICES

Collect or Cut-off

Current (VBE =0)

VCE =1500 V

10

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =5 V

100

µA

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

(IB =0)

IC = 100 mA

700

V

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =6 A

IB = 1.2 A

1.3

V

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =6 A

IB = 1.2 A

1.3

V

hFE

∗

DC Current G ain

IC =10 mA

VCE =5 V

IC =6 A

VCE =5 V

IC =6 A

VCE =5 V

Tj = 125

oC

10

6

4

13

ts

tf

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =4.5 A

f =64 KHz

IB1 =1.5 A

IB2 =-2.4 A

Vc eflybac k = 1100 sin







π

5

10

6





tV

3.3

160

µs

ns

∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

Safe Operating Area

Thermal Impedance

THD215HI

2/6

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