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THBT200 Datasheet(PDF) 2 Page - STMicroelectronics |
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THBT200 Datasheet(HTML) 2 Page - STMicroelectronics |
2 / 7 page Symbol Parameter Value Unit IPP Peak pulse current (see note 1) 10/1000 µs 5/310 µs 8/20 µs 2/10 µs 75 125 150 225 A ITSM Non repetitive surge peak on-state current (F = 50Hz) tp = 20ms 30 A Tstg Tj Storage temperature range Maximum junction temperature - 40 to + 150 150 °C TL Maximum lead temperature for soldering during 10s 230 °C ABSOLUTE MAXIMUM RATINGS (Tamb =25 °C) Symbol Parameter Value Unit Rth (j-a) Junction to ambient 80 °C/W THERMAL RESISTANCE Note 1 : Pulse waveform : 10/1000 µstr=10µstp=1000µs 5/310 µstr=5µstp=310µs 2/10 µstr=2µstp=10µs 100 50 %I PP t t rp 0 t ® THBT200S 2/7 |
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