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BRT12-H Datasheet(PDF) 3 Page - Vishay Siliconix |
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BRT12-H Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 8 page BRT11/ 12/ 13 Document Number 83689 Rev. 1.4, 11-Apr-05 Vishay Semiconductors www.vishay.com 3 Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input 2) Static air, SITAC soldered in pcb or base plate. Output 2) Static air, SITAC soldered in pcb or base plate. Coupler Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1.1 1.35 V Reverse current VR = 6 V IR 10 µA Thermal resistance 2) junction - ambient Rthja 750 °C/W Parameter Test condition Symbol Min Typ. Max Unit Critical rate of rise of off-state voltage VD = 0.67 VDRM, TJ = 25 °C dV/dtcr 10 kV/ µs VD = 0.67 VDRM, TJ = 80 °C dV/dtcr 5kV/ µs Critical rate of rise of voltage at current commutation VD = 0.67 VDRM, TJ = 25 °C, dI/dtcrq ≤ 15 A/ms dV/dtcrq 10 kV/ µs VD = 0.67 VDRM, TJ = 80 °C, dI/dtcrq ≤ 15 A/ms dV/dtcrq 5kV/ µs Critical rate of rise of on-state current dI/dtcr 8A/ µs Pulse current tp ≤ 5 µs, f 0 100 Hz, dItp/dt ≤ 8 A/µs Itp 2A On-state voltage IT = 300 mA VT 2.3 V Off-state current TC = 80 °C, VDRM ID 0.5 100 µA Holding current VD = 10 V IH 80 500 µA Thermal resistance 2) junction - ambient RthJA Rthja 125 °C/W Parameter Test condition Symbol Min Typ. Max Unit Trigger current VD = 10 V, F - Versions IFT 1.2 mA VD = 10 V, H - Versions IFT 0.4 2 mA VD = 10 V, M - Versions IFT 0.8 3 mA Trigger current temperature gradient ∆I FT/∆Tj 714 µA/°C Capacitance (input-output) VR = 0 V, f = 1 kHz CIO 2pF |
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