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BRT12-H Datasheet(PDF) 3 Page - Vishay Siliconix

Part # BRT12-H
Description  Optocoupler, Phototriac Output
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BRT12-H Datasheet(HTML) 3 Page - Vishay Siliconix

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BRT11/ 12/ 13
Document Number 83689
Rev. 1.4, 11-Apr-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
2) Static air, SITAC soldered in pcb or base plate.
Output
2) Static air, SITAC soldered in pcb or base plate.
Coupler
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Forward voltage
IF = 10 mA
VF
1.1
1.35
V
Reverse current
VR = 6 V
IR
10
µA
Thermal resistance 2) junction - ambient
Rthja
750
°C/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Critical rate of rise of off-state
voltage
VD = 0.67 VDRM, TJ = 25 °C
dV/dtcr
10
kV/
µs
VD = 0.67 VDRM, TJ = 80 °C
dV/dtcr
5kV/
µs
Critical rate of rise of voltage at
current commutation
VD = 0.67 VDRM, TJ = 25 °C,
dI/dtcrq ≤ 15 A/ms
dV/dtcrq
10
kV/
µs
VD = 0.67 VDRM, TJ = 80 °C,
dI/dtcrq ≤ 15 A/ms
dV/dtcrq
5kV/
µs
Critical rate of rise of on-state
current
dI/dtcr
8A/
µs
Pulse current
tp ≤ 5 µs, f 0 100 Hz,
dItp/dt ≤ 8 A/µs
Itp
2A
On-state voltage
IT = 300 mA
VT
2.3
V
Off-state current
TC = 80 °C, VDRM
ID
0.5
100
µA
Holding current
VD = 10 V
IH
80
500
µA
Thermal resistance 2) junction -
ambient
RthJA
Rthja
125
°C/W
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Trigger current
VD = 10 V, F - Versions
IFT
1.2
mA
VD = 10 V, H - Versions
IFT
0.4
2
mA
VD = 10 V, M - Versions
IFT
0.8
3
mA
Trigger current temperature
gradient
∆I
FT/∆Tj
714
µA/°C
Capacitance (input-output)
VR = 0 V, f = 1 kHz
CIO
2pF


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