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BFQ67F Datasheet(PDF) 1 Page - Vishay Siliconix |
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BFQ67F Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BFQ67F Document Number 85097 Rev. 1.4, 05-Sep-08 Vishay Semiconductors www.vishay.com 1 2 1 3 Electrostatic sensitive device. Observe precautions for handling. 16867 Not for new design, this product will be obsoleted soon Silicon NPN Planar RF Transistor Description The main purpose of this bipolar transistor is broad- band amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical per- formance and reliability are taken to a new level cov- ering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some bet- ter electrical performance. All of these aspects make this device an ideal choice for demanding RF applica- tions. Features • Low noise figure • High transition frequency • High power gain • Small feedback capacitance • Flat-lead SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal broadband applications, such as in satellite TV tuners, RF modules for wireless and mobile communications up to 2 GHz. Mechanical Data Typ: BFQ67F Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Part Marking Package BFQ67F V2 SOT-490 Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 10 V Emitter-base voltage VEBO 2.5 V Collector current IC 50 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C e3 |
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