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VSKT5716P Datasheet(PDF) 3 Page - Vishay Siliconix |
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VSKT5716P Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 11 page Document Number: 94419 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 23-Apr-08 3 VSK.41, .56..PbF Series Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 45/60 A Vishay High Power Products Note (1) Available with dV/dt = 1000 V/ms, to complete code add S90 i.e. VSKT41/16AS90 Note • Table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC TRIGGERING PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS Maximum peak gate power PGM 10 W Maximum average gate power PG(AV) 2.5 Maximum peak gate current IGM 2.5 A Maximum peak negative gate voltage - VGM 10 V Maximum gate voltage required to trigger VGT TJ = - 40 °C Anode supply = 6 V resistive load 4.0 TJ = 25 °C 2.5 TJ = 125 °C 1.7 Maximum gate current required to trigger IGT TJ = - 40 °C Anode supply = 6 V resistive load 270 mA TJ = 25 °C 150 TJ = 125 °C 80 Maximum gate voltage that will not trigger VGD TJ = 125 °C, rated VDRM applied 0.25 V Maximum gate current that will not trigger IGD TJ = 125 °C, rated VDRM applied 6 mA BLOCKING PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS Maximum peak reverse and off-state leakage current at VRRM, VDRM IRRM, IDRM TJ = 125 °C, gate open circuit 15 mA RMS insulation voltage VINS 50 Hz, circuit to base, all terminals shorted 2500 (1 min) 3500 (1 s) V Maximum critical rate of rise of off-state voltage dV/dt (1) TJ = 125 °C, linear to 0.67 VDRM 500 V/µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VSK.41 VSK.56 UNITS Junction operating and storage temperature range TJ, TStg - 40 to 125 °C Maximum internal thermal resistance, junction to case per module RthJC DC operation 0.23 0.20 K/W Typical thermal resistance, case to heatsink RthCS Mounting surface flat, smooth and greased 0.1 Mounting torque ± 10 % to heatsink A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the compound. 5 Nm busbar 3 Approximate weight 110 g 4oz. Case style JEDEC TO-240AA ΔR CONDUCTION PER JUNCTION DEVICES SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS 180° 120° 90° 60° 30° 180° 120° 90° 60° 30° VSK.41 0.11 0.13 0.17 0.23 0.34 0.09 0.14 0.18 0.23 0.34 °C/W VSK.56 0.09 0.11 0.13 0.18 0.27 0.07 0.11 0.14 0.19 0.28 |
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