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VSKT9216S90P Datasheet(PDF) 2 Page - Vishay Siliconix |
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VSKT9216S90P Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 11 page www.vishay.com For technical questions, contact: ind-modules@vishay.com Document Number: 94421 2 Revision: 24-Apr-08 VSK.71, .91..PbF Series Vishay High Power Products Thyristor/Diode and Thyristor/Thyristor (ADD-A-PAKTM Generation 5 Power Modules), 75/95 A ELECTRICAL SPECIFICATIONS Notes (1) I2t for time tx = I2√t x √tx (2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2 (3) 16.7 % x π x I AV < I < π x IAV (4) I > π x I AV VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VDRM, MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE, GATE OPEN CIRCUIT V IRRM, IDRM AT 125 °C mA VSK.71/.91 04 400 500 400 15 06 600 700 600 08 800 900 800 10 1000 1100 1000 12 1200 1300 1200 14 1400 1500 1400 16 1600 1700 1600 ON-STATE CONDUCTION PARAMETER SYMBOL TEST CONDITIONS VSK.71 VSK.91 UNITS Maximum average on-state current (thyristors) IT(AV) 180° conduction, half sine wave, TC = 85 °C 75 95 A Maximum average forward current (diodes) IF(AV) Maximum continuous RMS on-state current, as AC switch IO(RMS) 165 210 Maximum peak, one-cycle non-repetitive on-state or forward current ITSM or IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 1665 1785 t = 8.3 ms 1740 1870 t = 10 ms 100 % VRRM reapplied 1400 1500 t = 8.3 ms 1470 1570 t = 10 ms TJ = 25 °C no voltage reapplied 1850 2000 t = 8.3 ms 1940 2100 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied Initial TJ = TJ maximum 13.86 15.91 kA2s t = 8.3 ms 12.56 14.52 t = 10 ms 100 % VRRM reapplied 9.80 11.25 t = 8.3 ms 8.96 10.27 t = 10 ms TJ = 25 °C, no voltage reapplied 17.11 20.00 t = 8.3 ms 15.60 18.30 Maximum I2 √t for fusing I2 √t (1) t = 0.1 to 10 ms, no voltage reapplied TJ = TJ maximum 138.6 159.1 kA2 √s Maximum value or threshold voltage VT(TO) (2) Low level (3) TJ = TJ maximum 0.82 0.80 V High level (4) 0.85 0.85 Maximum value of on-state slope resistance rt (2) Low level (3) TJ = TJ maximum 3.00 2.40 m Ω High level (4) 2.90 2.25 Maximum peak on-state or forward voltage VTM ITM = π x IT(AV) TJ = 25 °C 1.59 1.58 V VFM IFM = π x IF(AV) Maximum non-repetitive rate of rise of turned on current dI/dt TJ = 25 °C, from 0.67 VDRM, ITM = π x IT(AV), Ig = 500 mA, tr < 0.5 µs, tp > 6 µs 150 A/µs Maximum holding current IH TJ = 25 °C, anode supply = 6 V, resistive load, gate open circuit 250 mA Maximum latching current IL TJ = 25 °C, anode supply = 6 V, resistive load 400 or I (RMS) I (RMS) |
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