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HVV1214-025 Datasheet(PDF) 1 Page - HVVi Semiconductors, Inc. |
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HVV1214-025 Datasheet(HTML) 1 Page - HVVi Semiconductors, Inc. |
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1 / 2 page  TM HVV1214-025 PRODUCT OVERVIEW L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty for Ground Based Radar Applications The innovative Semiconductor Company! HVVi Semiconductors, Inc. 10235 S. 51st St. Suite 100 Phoenix, AZ. 85044 For additional information: Tel: (866) 429-HVVi (4884) or visit www.hvvi.com © 2008 HVVi Semiconductors, Inc. All Rights Reserved. EG-01-PO05X5 10/13/08 1 DESCRIPTION FEaTURES aBSOLUTE MaXIMUM RaTINGS RUGGEDNESS THERMaL CHaRaCTERISTICS ELECTRICaL CHaRaCTERISTICS PaCKaGE The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. 1 Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2 Rated at TCASE = 25°C • High Power Gain • Excellent Ruggedness • 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1214-025 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO05X1 10235 S. 51 st St. Suite 100 HVVi Semiconductors, Inc. Confidential 4/29/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. • High Power Gain • Excellent Ruggedness • 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1214-025 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 ! A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 ! A GP 1 Power Gain POUT=25W,F=1200,1400MHz 17.5 dB IRL 1 Input Return Loss POUT=25W,F=1200,1400MHz 8 dB Drain Efficiency POUT=25W,F=1200,1400MHz 49 % PD 1 Pulse Droop POUT=25W,F=1200,1400MHz <0.2 dB 1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2.) Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD 2 Power Dissipation 116 W TS Storage Temperature -65 to +200 °C TJ Junction Temperature 200 °C Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W Symbol Parameter Test Condition Max Units LMT 1 Load Mismatch Tolerance POUT = 300W F = 1090 MHz 20:1 VSWR RUGGEDNESS PACKAGE THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS FEATURES DESCRIPTION HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO05X1 10235 S. 51 st St. Suite 100 HVVi Semiconductors, Inc. Confidential 4/29/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. • High Power Gain • Excellent Ruggedness • 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1214-025 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 ! A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 ! A GP 1 Power Gain POUT=25W,F=1200,1400MHz 17.5 dB IRL 1 Input Return Loss POUT=25W,F=1200,1400MHz 8 dB Drain Efficiency POUT=25W,F=1200,1400MHz 49 % PD 1 Pulse Droop POUT=25W,F=1200,1400MHz <0.2 dB 1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2.) Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD 2 Power Dissipation 116 W TS Storage Temperature -65 to +200 °C TJ Junction Temperature 200 °C Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W Symbol Parameter Test Condition Max Units LMT 1 Load Mismatch Tolerance POUT = 300W F = 1090 MHz 20:1 VSWR RUGGEDNESS PACKAGE THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS FEATURES DESCRIPTION HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO05X1 10235 S. 51 st St. Suite 100 HVVi Semiconductors, Inc. Confidential 4/29/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. • High Power Gain • Excellent Ruggedness • 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1214-025 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 ! A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 ! A GP 1 Power Gain POUT=25W,F=1200,1400MHz 17.5 dB IRL 1 Input Return Loss POUT=25W,F=1200,1400MHz 8 dB Drain Efficiency POUT=25W,F=1200,1400MHz 49 % PD 1 Pulse Droop POUT=25W,F=1200,1400MHz <0.2 dB 1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2.) Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD 2 Power Dissipation 116 W TS Storage Temperature -65 to +200 °C TJ Junction Temperature 200 °C Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W Symbol Parameter Test Condition Max Units LMT 1 Load Mismatch Tolerance POUT = 300W F = 1090 MHz 20:1 VSWR RUGGEDNESS PACKAGE THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS FEATURES DESCRIPTION HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO05X1 10235 S. 51 st St. Suite 100 HVVi Semiconductors, Inc. Confidential 4/29/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-025 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200!s Pulse, 10% Duty The high power HVV1214-025 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. • High Power Gain • Excellent Ruggedness • 48V Supply Voltage The device resides in a Surface Mount Transistor Package with a ceramic lid. The SM200 package style is qualified for gross leak test – MIL-STD-883, Method 1014. The HVV1214-025 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 ! A IGSS Gate Leakage Current VGS=5V,VDS=0V <1 ! A GP 1 Power Gain POUT=25W,F=1200,1400MHz 17.5 dB IRL 1 Input Return Loss POUT=25W,F=1200,1400MHz 8 dB Drain Efficiency POUT=25W,F=1200,1400MHz 49 % PD 1 Pulse Droop POUT=25W,F=1200,1400MHz <0.2 dB 1.) Under Pulse Conditions: Pulse Width = 200!sec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 15mA 2.) Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 2 A PD 2 Power Dissipation 116 W TS Storage Temperature -65 to +200 °C TJ Junction Temperature 200 °C Symbol Parameter Max Unit Thermal Resistance 1.5 °C/W Symbol Parameter Test Condition Max Units LMT 1 Load Mismatch Tolerance POUT = 300W F = 1090 MHz 20:1 VSWR RUGGEDNESS PACKAGE THERMAL CHARACTERISTICS ELECTRICAL CHARACTERISTICS FEATURES DESCRIPTION HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO08X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/23/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-075 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. High Power Gain Excellent Ruggedness 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The HV400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1214-075 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP1 Power Gain POUT=75W,F=1200MHz,1400MHz 21 dB IRL1 Input Return Loss POUT=75W,F=1200MHz,1400MHz 9 dB D 1 Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 % PD1 Pulse Droop POUT=75W,F=1200MHz,1400MHz <0.6 dB 1.) Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 2.) Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD2 Power Dissipation 250 W TS Storage Temperature -65 to +200 °C TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance POUT = 75W F = 1400MHz 20:1 VSWR Symbol Parameter Max Unit JC 1 Thermal Resistance 0.70 °C/W THERMAL CHARACTERISTICS PACKAGE RUGGEDNESS ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS FEATURES DESCRIPTION HVVi Semiconductors, Inc. For additional information, visit: www.hvvi.com EG-01-PO08X1 10235 S. 51st St. Suite 100 HVVi Semiconductors, Inc. Confidential 5/23/08 Phoenix, Az. 85044 © 2008 HVVi Semiconductors, Inc. All Rights Reserved. 1 HVV1214-075 L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200µs Pulse, 10% Duty The high power HVV1214-075 device is a high voltage silicon enhancement mode RF transistor designed for L-Band pulsed radar applications operating over the frequency range from 1.2GHz to 1.4GHz. High Power Gain Excellent Ruggedness 48V Supply Voltage The device resides in a two-lead metal flanged package with liquid crystal polymer lid. The HV400 package style is qualified for gross leak test – MIL-STD-750D, Method 1071.6, Test Condition C. The HVV1214-075 device is capable of withstanding an output load mismatch corresponding to a 20:1 VSWR over all phase angles and rated output power and operating voltage across the frequency band of operation. Symbol Parameter Conditions Typ Units VBR(DSS) Drain-Source Breakdown VGS=0V,ID=1mA 110 V IDSS Drain Leakage Current VGS=0V,VDS=48V <10 µA IGSS Gate Leakage Current VGS=5V,VDS=0V <1 µA GP1 Power Gain POUT=75W,F=1200MHz,1400MHz 21 dB IRL1 Input Return Loss POUT=75W,F=1200MHz,1400MHz 9 dB D 1 Drain Efficiency POUT=75W,F=1200MHz,1400MHz 44 % PD1 Pulse Droop POUT=75W,F=1200MHz,1400MHz <0.6 dB 1.) Under Pulse Conditions: Pulse Width = 200µsec, Pulse Duty Cycle = 10% at VDD = 48V, IDQ = 50mA 2.) Rated at TCASE = 25°C Symbol Parameter Value Unit VDSS Drain-Source Voltage 105 V VGS Gate-Source Voltage 10 V IDSX Drain Current 8 A PD2 Power Dissipation 250 W TS Storage Temperature -65 to +200 °C TJ Junction Temperature 200 °C Symbol Parameter Test Condition Max Units LMT1 Load Mismatch Tolerance POUT = 75W F = 1400MHz 20:1 VSWR Symbol Parameter Max Unit JC 1 Thermal Resistance 0.70 °C/W THERMAL CHARACTERISTICS PACKAGE RUGGEDNESS ABSOLUTE MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS FEATURES DESCRIPTION 95 1300MHz 102 <25 2mA 1300MHz 1300MHz 1300MHz 1300MHz 1,2 |
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