New Product

MBR40H35CT thru MBR40H60CT

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88920

Revision: 19-May-08

2

Notes:

(1) Pulse test: 300 µs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

RATINGS AND CHARACTERISTICS CURVES

PARAMETER

TEST CONDITIONS

SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT

Maximum instantaneous

0.64

0.55

0.76

0.70

0.68

0.60

0.83

0.73

V

Maximum instantaneous

100

15

µA

mA

Typical junction

capacitance

4.0 V, 1 MHz per diode

1200

920

pF

PARAMETER

SYMBOL MBR40H35CT MBR40H45CT MBR40H50CT MBR40H60CT UNIT

Thermal resistance, junction to case per diode

1.8

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AB

MBR40H45CT-E3/45

1.58

45

50/tube

Tube

Figure 1. Forward Derating Curve Per Diode

0

10

20

30

40

50

200

25

50

75

100

125

150

175

MBR40H35CT - MBR40H45CT

MBR40H50CT - MBR40H60CT

Case Temperature (°C)

Figure 2. Maximum Non-Repetitive Peak Forward Surge

Current Per Diode

0

50

400

300

250

200

150

100

100

10

1

350

Number of Cycles at 60 Hz

MBR40H35CT - MBR40H45CT

MBR40H50CT - MBR40H60CT