KBU4A thru KBU4M

Vishay General Semiconductor

Document Number: 88656

Revision: 15-Apr-08

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PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

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3

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

Figure 3. Typical Forward Characteristics Per Diode

Figure 4. Typical Reverse Leakage Characteristics Per Diode

0.6

0.7

100

10

1

0.1

0.8

0.9

1.0

1.1

1.2

1.3

T

Pulse Width = 300 µs

1 % Duty Cycle

Instantaneous Forward Voltage (V)

0

20

40

60

80

100

0.01

0.1

1

10

50

T

T

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typical Junction Capacitance Per Diode

0.1

1

10

100

0

25

50

75

100

150

Reverse Voltage (V)

T

f = 1.0 MHz

V

0.160 (4.1)

0.065 (1.7)

0.185 (4.7)

0.895 (22.7)

0.935 (23.7)

0.140 (3.6)

0.165 (4.2)

0.085(2.2)

0.240 (6.09)

0.200 (5.08)

0.220 (5.6)

0.180 (4.6)

0.075 (1.9) R TYP. (2 Places)

45°

0.205 (5.2)

0.185 (4.7)

0.052 (1.3)

0.048 (1.2)

0.280 (7.1)

0.260 (6.6)

DIA.

0.760

(19.3)

MAX.

0.700

(17.8)

0.660

(16.8)

1.0

(25.4)

MIN.

0.455 (11.3)

0.405 (10.3)

Case Style KBU