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P4SMA100A Datasheet(PDF) 3 Page - Vishay Siliconix

Part # P4SMA100A
Description  Surface Mount TRANSZORB® Transient Voltage Suppressors
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

P4SMA100A Datasheet(HTML) 3 Page - Vishay Siliconix

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P4SMA Series
Vishay General Semiconductor
Document Number: 88367
Revision: 21-Oct-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Note:
(1) Mounted on minimum recommended pad layout
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
VALUE
UNIT
Thermal resistance, junction to ambient air (1)
RθJA
120
°C/W
Thermal resistance, junction to leads
RθJL
30
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
P4SMA6.8A-E3/61
0.064
61
1800
7" diameter plastic tape and reel
P4SMA6.8A-E3/5A
0.064
5A
7500
13" diameter plastic tape and reel
P4SMA6.8AHE3/61 (1)
0.064
61
1800
7" diameter plastic tape and reel
P4SMA6.8AHE3/5A (1)
0.064
5A
7500
13" diameter plastic tape and reel
Figure 1. Peak Pulse Power Rating Curve
Figure 2. Pulse Power or Current vs. Initial Junction Temperature
0.1
1
10
100
P4SMA6.8A -
P4SMA91A
P4SMA100A -
P4SMA220A
0.2 x 0.2" (5.0 x 5.0 mm)
Copper Pad Areas
Non-Repetitive Pulse
Waveform shown in Fig. 3
T
A = 25 °C
td - Pulse Width (s)
0.1 µs
1.0 µs
10 µs
100 µs
1.0 ms
10 ms
0
25
50
75
100
100
75
50
25
0
125
150
175
200
TJ - Initial Temperature (°C)
Figure 3. Pulse Waveform
Figure 4. Typical Junction Capacitance
0
50
100
150
t
d
0
1.0
2.0
3.0
4.0
t
r = 10 µs
Peak Value
I
PPM
Half Value -
I
PPM
I
PP
2
10/1000 µs Waveform
as defined by R.E.A.
t - Time (ms)
T
J = 25 °C
Pulse Width (t
d)
is defined as the Point
where the Peak Current
decays to 50 % of I
PPM
10
100
1000
10 000
10
1
100
200
Uni-Directional
Bi-Directional
VBR - Breakdown Voltage (V)
T
J = 25 °C
f = 1.0 MHz
V
sig = 50 mVp-p
Measured at
Stand-Off
Voltage V
WM


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