SUD40N08-16 datasheet(2/5 Pages) VISHAY

Part #	SUD40N08-16

Description	N-Channel 80-V (D-S) 175C MOSFET

Download	5 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 5 page

SUD40N08-16

Vishay Siliconix

www.vishay.com

2

Document Number: 71323

S-40272—Rev. C, 23-Feb-04

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

80

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2.0

4.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 80 V, VGS = 0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 80 V, VGS = 0 V, TJ = 125_C

50

mA

g

DSS

VDS = 80 V, VGS = 0 V, TJ = 175_C

250

m

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

60

A

VGS = 10 V, ID = 40 A

0.013

0.016

Drain-Source On-State Resistanceb

rDS(on)

VGS = 10 V, ID = 40 A, TJ = 125_C

0.027

W

DS(on)

VGS = 10 V, ID = 40 A, TJ = 175_C

0.037

Forward Transconductanceb

gfs

VDS = 15 V, ID = 40 A

45

S

Dynamica

Input Capacitance

Ciss

1960

Output Capacitance

Coss

VGS = 0 V, VDS = 25 V, F = 1 MHz

370

pF

Reverse Transfer Capacitance

Crss

200

Total Gate Chargec

Qg

42

60

Gate-Source Chargec

Qgs

VDS = 40 V, VGS = 10 V, ID = 40 A

7

nC

Gate-Drain Chargec

Qgd

DS

, GS

, D

13

Gate Resistance

Rg

0.5

2.7

W

Turn-On Delay Timec

td(on)

12

20

Rise Timec

tr

VDD = 40 V, RL = 1.0 W

52

80

ns

Turn-Off Delay Timec

td(off)

VDD = 40 V, RL = 1.0 W

ID ^ 40 A, VGEN = 10 V, Rg = 2.5 W

25

38

ns

Fall Timec

tf

10

15

Source-Drain Diode Ratings and Characteristic (TC = 25_C)

Pulsed Current

ISM

60

A

Diode Forward Voltageb

VSD

IF = 40 A, VGS = 0 V

1.0

1.5

V

Source-Drain Reverse Recovery Time

trr

IF = 40 A, di/dt = 100 A/ms

45

70

ns

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width v 300 ms, duty cycle v 2%.

c.

Independent of operating temperature.

Similar Part No. - SUD40N08-16

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SUD40N08-16	60Kb / 4P	N-Channel 80-V (D-S) 175 Degree Celcious MOSFET Rev. C, 23-Feb-04
Vishay Siliconix	SUD40N08-16	194Kb / 4P	N-Channel 80-V (D-S) 175Celsius MOSFET Rev. B, 10-Apr-06
Vishay Telefunken	SUD40N08-16	72Kb / 5P	N-Channel 80-V (D-S) 175C MOSFET
Inchange Semiconductor ...	SUD40N08-16	309Kb / 2P	isc N-Channel MOSFET Transistor
SHENZHEN DOINGTER SEMIC...	SUD40N08-16	1Mb / 4P	N-Channel MOSFET uses advanced SGT technology

More results

Similar Description - SUD40N08-16

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SUM40N02-12P	59Kb / 5P	N-Channel 20-V (D-S) 175C MOSFET Rev. D, 20-Dec-0
	SUR70N02-04P	79Kb / 4P	N-Channel 20-V (D-S) 175C MOSFET Rev. A, 19-Jan-04
	SUD50N03-07AP	51Kb / 4P	N-Channel 30-V (D-S) 175C MOSFET Rev. C, 16-Jun-03
	SUM110N05-06L	59Kb / 5P	N-Channel 55-V (D-S), 175C MOSFET Rev. B, 15-Nov-04
	SUP90N06-05L	59Kb / 5P	N-Channel 60-V (D-S) 175C MOSFET Rev. A, 09-Aug-04
	SUD40N02-08	73Kb / 5P	N-Channel 20-V (D-S), 175C MOSFET Rev. B, 18-Aug-03
	SUM16N20-125	48Kb / 5P	N-Channel 200-V (D-S) 175C MOSFET Rev. C, 16-Jun-03
	SUM85N03-06P	89Kb / 6P	N-Channel 30-V (D-S) 175C MOSFET Rev. B, 08-Dec-03
	SUP75N06-08	47Kb / 4P	N-Channel 60-V (D-S), 175C MOSFET Rev. F, 10-Dec-01
	SUP75N03-04	41Kb / 4P	N-Channel 30-V (D-S), 175C MOSFET Rev. E, 18-Jun-01

More results

SUD40N08-16 Datasheet(PDF) 2 Page - Vishay Siliconix

SUD40N08-16 Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - SUD40N08-16

Similar Description - SUD40N08-16

Html Pages

1 2 3 4 5

Datasheet Download

Link URL