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SUD19P06-60 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SUD19P06-60 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 69253 S-72191-Rev. A, 22-Oct-07 Vishay Siliconix SUD19P06-60 New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min Typ Max Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 60 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1 - 3 V Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 60 V, VGS = 0 V - 1 µA VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 ° C - 125 On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 30 A Drain-Source On-State Resistancea rDS(on) VGS = - 10 V, ID = - 10 A 0.048 0.060 Ω VGS = - 10 V, ID = - 10 A, TJ = 125 °C 0.102 VGS = - 10 V, ID = - 10 A, TJ = 150 °C 0.120 VGS = - 4.5 V, ID = - 5 A 0.061 0.077 Forward Transconductancea gfs VDS = - 15 V, ID = - 10 A 22 S Dynamicb Input Capacitance Ciss VGS = 0 V, VDS = - 25 V, f = 1 MHz 1140 1710 pF Output Capacitance Coss 130 Reverse Transfer Capacitance Crss 90 Total Gate Chargec Qg VDS = - 30 V, VGS = - 10 V, ID = - 10 A 26 40 nC Gate-Source Chargec Qgs 4.5 Gate-Drain Chargec Qgd 7.0 Gate Resistance Rg f = 1 MHz 7.0 Ω Turn-On Delay Timec td(on) VDD = - 30 V, RL = 3 Ω ID ≅ - 19 A, VGEN = - 10 V, Rg = 2.5 Ω 815 ns Rise Timec tr 915 Turn-Off Delay Timec td(off) 65 100 Fall Timec tf 30 45 Drain-Source Body Diode and Characteristics (TC = 25 °C) b Continuous Current IS - 30 A Pulsed Current ISM - 30 Forward Voltagea VSD IF = - 19 A, VGS = 0 V - 1.0 - 1.5 V Reverse Recovery Time trr IF = - 19 A, di/dt = 100 A/µs 41 61 ns |
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