SUD08P06-155L-E3 datasheet(1/6 Pages) VISHAY

Part #	SUD08P06-155L-E3

Description	P-Channel 60-V (D-S), 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Vishay Siliconix

SUD08P06-155L

Document Number: 73209

S-71660-Rev. B, 06-Aug-07

www.vishay.com

1

New Product

P-Channel 60-V (D-S), 175 °C MOSFET

FEATURES

•

TrenchFET® Power MOSFETS

•

175 °C Rated Maximum Junction Temperature

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

Qg (Typ)

- 60

0.155 at VGS = - 10 V

- 8.4

12.5

0.280 at VGS = - 4.5 V

- 7.4

TO-252

S

GD

Top View

Drain Connected to Tab

Ordering Information: SUD08P06-155L-E3 (Lead (Pb)-free)

S

G

D

P-Channel MOSFET

Notes:

a. See SOA curve for voltage derating.

b. Surface Mounted on 1" x 1" FR-4 boad.

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Gate-Source Voltage

VGS

± 20

V

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

- 8.4

A

TC = 100 °C

- 6

Pulsed Drain Current

IDM

- 18

Continuing Source Current (Diode Conduction)

IS

- 8.4

Avalanche Current

IAS

- 12

Single Pulse Avalanche Energy

L = 0.1 mH

EAS

7.2

mJ

Maximum Power Dissipation

TC = 25 °C

PD

25a

W

TA = 25 °C

2b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Junction-to-Ambientb

t

≤ 10 sec

RthJA

20

25

°C/W

Steady State

62

75

Junction-to-Case

RthJC

56

RoHS

COMPLIANT

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SUD08P06-155L-E3 Datasheet(PDF) 1 Page - Vishay Siliconix

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