Document Number: 93181

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www.vishay.com

Revision: 14-May-08

7

SD823C..C Series

Fast Recovery Diodes

(Hockey PUK Version),

810/910 A

Vishay High Power Products

Fig. 22 - Recovery Time Characteristics

Fig. 23 - Recovery Charge Characteristics

Fig. 24 - Recovery Current Characteristics

Fig. 25 - Recovery Time Characteristics

Fig. 26 - Recovery Charge Characteristics

Fig. 27 - Recovery Current Characteristics

2

2.5

3

3.5

4

4.5

5

5.5

6

10

100

1000

Rate Of Fa ll Of Forward Current - di/ dt (A/ µs)

500 A

I

= 1000 A

Sine Pulse

150 A

FM

SD823C..S20C Series

T = 150 °C; V > 100V

J

r

0

100

200

300

400

500

600

700

800

0

50 100 150 200 250 300

Ra te Of Fa ll Of Forward Current - d i/ d t (A/ µs)

500 A

I

= 1000 A

Sine Pulse

150 A

FM

SD823C..S20C Series

T = 150 °C; V > 100V

J

r

0

50

100

150

200

250

300

350

400

450

0

50 100 150 200 250 300

500 A

Ra te Of Fa ll Of Forward Current - di/ dt (A/ µs)

I

= 1000 A

Sine Pulse

150 A

FM

SD823C..S20C Series

T = 150 °C; V > 100V

r

J

2

2.5

3

3.5

4

4.5

5

5.5

6

6.5

7

10

100

1000

Rate Of Fall Of Forward Current - d i/d t (A/ µs)

500 A

I

= 1000 A

Sine Pulse

FM

150 A

SD823C..S30C Series

T = 150 °C; V > 100V

J

r

0

200

400

600

800

1000

1200

0

50

100 150 200 250 300

Rate Of Fall Of Forwa rd Current - di/d t (A/ µs)

500 A

I

= 1000 A

Sine Pulse

150 A

FM

SD823C..S30C Series

T = 150 °C; V > 100V

J

r

0

50

100

150

200

250

300

350

400

450

500

550

0

50 100 150 200 250 300

500 A

Ra te Of Fall Of Forward Current - d i/ dt (A/ µs)

150 A

I

= 1000 A

Sine Pulse

FM

SD823C..S30C Series

T = 150 °C; V > 100V

J

r