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M2035S Datasheet(PDF) 1 Page - Vishay Siliconix |
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M2035S Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 4 page M2035S & M2045S Vishay General Semiconductor Document Number: 88953 Revision: 19-May-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in low voltage, high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection applications. MECHANICAL DATA Case: TO-220AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 35 V, 45 V IFSM 200 A VF at IF = 20 A 0.55 V TJ max. 150 °C TO-220AB 1 2 3 1 2 CASE 3 MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL M2035S M2045S UNIT Maximum repetitive peak reverse voltage VRRM 35 45 V Maximum average forward rectified current (Fig. 1) IF(AV) 20 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 200 A Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz IRRM 2.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
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