M2035S & M2045S

Vishay General Semiconductor

Document Number: 88953

Revision: 19-May-08

For technical questions within your region, please contact one of the following:

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1

High-Voltage Trench MOS Barrier Schottky Rectifier

FEATURES

• Guardring for overvoltage protection

• Lower power losses, high efficiency

• Low forward voltage drop

• High forward surge capability

• High frequency operation

• Solder dip 260 °C, 40 s

• Component in accordance to RoHS 2002/95/EC

and WEEE 2002/96/EC

TYPICAL APPLICATIONS

For use in low voltage, high frequency rectifier of

switching mode power supplies, freewheeling diodes,

dc-to-dc converters or polarity protection applications.

MECHANICAL DATA

Case: TO-220AB

Epoxy meets UL 94V-0 flammability rating

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD22-B102

E3 suffix for consumer grade, meets JESD 201 class

1A whisker test

Polarity: As marked

Mounting Torque: 10 in-lbs maximum

PRIMARY CHARACTERISTICS

20 A

35 V, 45 V

200 A

0.55 V

150 °C

TO-220AB

1

2

3

1

2

CASE

3

PARAMETER

SYMBOL

M2035S

M2045S

UNIT

Maximum repetitive peak reverse voltage

35

45

V

Maximum average forward rectified current (Fig. 1)

20

A

Peak forward surge current 8.3 ms single half sine-wave

superimposed on rated load

200

A

2.0

A

dV/dt

10 000

V/µs

Operating junction and storage temperature range

- 55 to + 150

°C