SUM55P06-19L-E3 datasheet(2/6 Pages) VISHAY

Part #	SUM55P06-19L-E3

Description	P-Channel 60-V (D-S) 175 °C MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73059

S-80272-Rev. C, 11-Feb-08

Vishay Siliconix

SUM55P06-19L

Notes:

a. Pulse test; pulse width

≤ 300 µs, duty cycle ≤ 2 %.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = - 250 µA

- 60

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = - 250 µA

- 1

- 3

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = ± 20 V

± 100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = - 60 V, VGS = 0 V

- 1

µA

VDS = - 60 V, VGS = 0 V, TJ = 125 °C

- 50

VDS = - 60 V, VGS = 0 V, TJ = 175 °C

- 250

On-State Drain Currenta

ID(on)

VDS = - 5 V, VGS = - 10 V

- 120

A

Drain-Source On-State Resistancea

rDS(on)

VGS = - 10 V, ID = - 30 A

0.015

0.019

Ω

VGS = - 10 V, ID = - 30 A, TJ = 125 °C

0.033

VGS = - 10 V, ID = - 30 A, TJ = 175 °C

0.041

VGS = - 4.5 V, ID = - 20 A

0.020

0.025

Forward Transconductancea

gfs

VDS = - 15 V, ID = - 50 A

20

S

Dynamicb

Input Capacitance

Ciss

VGS = 0 V, VDS = - 25 V, f = 1 MHz

3500

pF

Output Capacitance

Coss

390

Reverse Transfer Capacitance

Crss

290

Total Gate Chargec

Qg

VDS = - 30 V, VGS = - 10 V, ID = - 55 A

76

115

nC

Gate-Source Chargec

Qgs

16

Gate-Drain Chargec

Qgd

19

Gate Resistance

Rg

f = 1.0 MHz

5.2

Ω

Turn-On Delay Timec

td(on)

VDD = - 30 V, RL = 0.54 Ω

ID ≅ - 55 A, VGEN = - 10 V, Rg = 2.5 Ω

12

20

ns

Rise Timec

tr

15

25

Turn-Off Delay Timec

td(off)

80

120

Fall Timec

tf

230

350

Source-Drain Diode Ratings and Characteristics TC = 25 °C

b

Continuous Current

IS

- 110

A

Pulsed Current

ISM

- 240

Forward Voltagea

VSD

IF = - 50 A, VGS = 0 V

- 1.0

- 1.5

V

Reverse Recovery Time

trr

IF = - 50 A, di/dt = 100 A/µs

45

68

ns

Peak Reverse Recovery Current

IRM(REC)

- 2.6

4.0

A

Reverse Recovery Charge

Qrr

0.059

0.136

µC

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