SUD50NP04-77P-T4-E3 datasheet(10/12 Pages) VISHAY

Part #	SUD50NP04-77P-T4-E3

Description	Complementary N- and P-Channel 40-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 73989

S-80109-Rev. B, 21-Jan-08

Vishay Siliconix

SUD50NP04-77P

New Product

P-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

** The power dissipation PD is based on TJ(max) = 150 °C, using

junction-to-case thermal resistance, and is more useful in settling the

upper dissipation limit for cases where additional heatsinking is

used. It is used to determine the current rating, when this rating falls

below the package limit.

Safe Operating Area, Junction-to-Case

Current Derating**, Junction-to-Case

Power Derating, Junction-to-Case

0.01

100

1

100

0.01

0.1

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which rDS(on) is specified

1ms

10 ms

100 ms

DC

100 µs

0.1

1

10

TC = 25 °C

Single Pulse

Limited byrDS(on)*

0

4

9

13

18

22

0

25

50

75

100

125

150

TC - Case Temperature (°C)

Package Limited

0

7

14

21

28

35

0

25

50

75

100

125

150

175

TC - Case Temperature (°C)

Current Derating**, Junction-to-Ambient

Power Derating, Junction-to-Ambient

0

1

3

4

6

7

0

25

50

75

100

125

150

TA - Ambient Temperature (°C)

0

0.7

1.4

2.1

2.8

3.5

0

25

50

75

100

125

150

175

TA - Ambient Temperature (°C)

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SUD50NP04-77P-T4-E3 Datasheet(PDF) 10 Page - Vishay Siliconix

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