HFB50PA60CPBF datasheet(1/7 Pages) VISHAY

Part #	HFB50PA60CPBF

Description	HEXFRED® Ultrafast Soft Recovery Diode, 2 x 25 A

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 94074

For technical questions, contact: diodes-tech@vishay.com

www.vishay.com

Revision: 25-Jul-08

1

HEXFRED®

Ultrafast Soft Recovery Diode, 2 x 25 A

HFA50PA60CPbF

Vishay High Power Products

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low IRRM

• Very low Qrr

• Specified at operating conditions

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA50PA60C is a state of the art center tap ultrafast

recovery diode. Employing the latest in epitaxial construction

and advanced processing techniques it features a superb

combination of characteristics which result in performance

which is unsurpassed by any rectifier previously available.

With basic ratings of 600 V and 25 A per leg continuous

current, the HFA50PA60C is especially well suited for use as

the companion diode for IGBTs and MOSFETs. In addition to

ultrafast recovery time, the HEXFRED® product line features

extremely low values of peak recovery current (IRRM) and

does not exhibit any tendency to “snap-off” during the

tb portion of recovery. The HEXFRED features combine to

offer designers a rectifier with lower noise and significantly

lower switching losses in both the diode and the switching

transistor. These HEXFRED advantages can help to

significantly

reduce

snubbing,

component

count

and

heatsink sizes. The HEXFRED HFA50PA60C is ideally

suited for applications in power supplies and power

conversion systems (such as inverters), motor drives, and

many other similar applications where high speed, high

efficiency is needed.

PRODUCT SUMMARY

VR

600 V

VF at 25 A at 25 °C

1.7 V

IF(AV)

2 x 25 A

trr (typical)

23 ns

TJ (maximum)

150 °C

Qrr (typical)

112 nC

dI(rec)M/dt (typical) at 125 °C

160 A/µs

IRRM (typical)

4.5 A

TO-247AC

Base

common

cathode

Common

cathode

2

13

Anode

1

Anode

2

Available

Pb-free

RoHS*

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Cathode to anode voltage

VR

600

V

Maximum continuous forward current

per leg

IF

TC = 100 °C

25

A

per device

50

Single pulse forward current

IFSM

225

Maximum repetitive forward current

IFRM

100

Maximum power dissipation

PD

TC = 25 °C

150

W

TC = 100 °C

60

Operating junction and storage temperature range

TJ, TStg

- 55 to + 150

°C

* Pb containing terminations are not RoHS compliant, exemptions may apply

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HFB50PA60CPBF Datasheet(PDF) 1 Page - Vishay Siliconix

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