Document Number: 81056

For technical questions, contact: emittertechsupport@vishay.com

www.vishay.com

Rev. 1.6, 05-Sep-08

287

TSUS5400, TSUS5401, TSUS5402

Infrared Emitting Diode, RoHS Compliant,

950 nm, GaAs

Vishay Semiconductors

Fig. 9 - Relative Radiant Power vs. Wavelength

Fig. 10 - Relative Radiant Intensity vs. Angular Displacement

PACKAGE DIMENSIONS in millimeters

900

950

0

0.25

0.5

0.75

1.0

1.25

- Wavelength (nm)

1000

94 7994

I

λ

0.4

0.2

0

0.2

0.4

0.6

94 7999

0.6

0.9

0.8

0°

30°

10°

20°

40°

50°

60°

70°

80°

0.7

1.0

A

C

Issue: 4; 23.04.98

1.2

+ 0.2

- 0.1

0.5

+ 0.15

- 0.05

2.54 nom.

0.5

+ 0.15

- 0.05

Area not plane

technical drawings

according to DIN

specifications

R 2.49 (sphere)

6.544-5258.01-4

96 12119