Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs

www.vishay.com

For technical questions, contact: emittertechsupport@vishay.com

Document Number: 81022

166

Rev. 1.7, 05-Sep-08

TSHA6500, TSHA6501, TSHA6502, TSHA6503

Vishay Semiconductors

DESCRIPTION

The TSHA650. series are infrared, 875 nm emitting diodes in

GaAlAs technology, molded in a clear, untinted plastic

package.

FEATURES

• Package type: leaded

• Package form: T-1¾

• Dimensions (in mm): Ø 5

• Peak wavelength:

λ

• High reliability

• Angle of half intensity:

ϕ = ± 24°

• Low forward voltage

• Suitable for high pulse current operation

• Good spectral matching with Si photodetectors

• Lead

(Pb)-free

component

in

accordance

with

RoHS 2002/95/EC and WEEE 2002/96/EC

APPLICATIONS

• Infrared remote control and free air data transmission

systems with comfortable radiation angle

• This emitter series is dedicated to systems with panes in

transmission

space

between

emitter

and

detector,

because of the low absorbtion of 875 nm radiation in glass

Note

Test conditions see table “Basic Characteristics”

Note

MOQ: minimum order quantity

94 8389

PRODUCT SUMMARY

COMPONENT

ϕ (deg)

λ

TSHA6500

20

± 24

875

600

TSHA6501

25

± 24

875

600

TSHA6502

30

± 24

875

600

TSHA6503

35

± 24

875

600

ORDERING INFORMATION

ORDERING CODE

PACKAGING

REMARKS

PACKAGE FORM

TSHA6500

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6501

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6502

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

TSHA6503

Bulk

MOQ: 4000 pcs, 4000 pcs/bulk

T-1¾

ABSOLUTE MAXIMUM RATINGS

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Reverse voltage

5V

Forward current

100

mA

Peak forward current

200

mA

Surge forward current

2.5

A

Power dissipation

180

mW