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TSHA6503 Datasheet(PDF) 1 Page - Vishay Siliconix |
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TSHA6503 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81022 166 Rev. 1.7, 05-Sep-08 TSHA6500, TSHA6501, TSHA6502, TSHA6503 Vishay Semiconductors DESCRIPTION The TSHA650. series are infrared, 875 nm emitting diodes in GaAlAs technology, molded in a clear, untinted plastic package. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Peak wavelength: λ p = 875 nm • High reliability • Angle of half intensity: ϕ = ± 24° • Low forward voltage • Suitable for high pulse current operation • Good spectral matching with Si photodetectors • Lead (Pb)-free component in accordance with RoHS 2002/95/EC and WEEE 2002/96/EC APPLICATIONS • Infrared remote control and free air data transmission systems with comfortable radiation angle • This emitter series is dedicated to systems with panes in transmission space between emitter and detector, because of the low absorbtion of 875 nm radiation in glass Note Test conditions see table “Basic Characteristics” Note MOQ: minimum order quantity 94 8389 PRODUCT SUMMARY COMPONENT Ie (mW/sr) ϕ (deg) λ P (nm) tr (ns) TSHA6500 20 ± 24 875 600 TSHA6501 25 ± 24 875 600 TSHA6502 30 ± 24 875 600 TSHA6503 35 ± 24 875 600 ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS PACKAGE FORM TSHA6500 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA6501 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA6502 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ TSHA6503 Bulk MOQ: 4000 pcs, 4000 pcs/bulk T-1¾ ABSOLUTE MAXIMUM RATINGS PARAMETER TEST CONDITION SYMBOL VALUE UNIT Reverse voltage VR 5V Forward current IF 100 mA Peak forward current tp/T = 0.5, tp = 100 µs IFM 200 mA Surge forward current tp = 100 µs IFSM 2.5 A Power dissipation PV 180 mW |
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