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TSHA4401 Datasheet(PDF) 2 Page - Vishay Siliconix |
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TSHA4401 Datasheet(HTML) 2 Page - Vishay Siliconix |
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2 / 5 page  www.vishay.com For technical questions, contact: emittertechsupport@vishay.com Document Number: 81017 148 Rev. 1.6, 16-Sep-08 TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature Note Tamb = 25 °C, unless otherwise specified Note Tamb = 25 °C, unless otherwise specified 0 20 40 60 80 100 120 140 160 180 200 010 20 30 40 50 60 70 80 90 100 21311 T amb - Ambient Temperature (°C) R thJA = 300 K/W 0 20 40 60 80 100 120 0 10 203040 506070 80 90 100 T amb - Ambient Temperature (°C) 21312 R thJA = 300 K/W BASIC CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA, tp = 20 ms VF 1.5 1.8 V IF = 1.5 A, tp = 100 µs VF 3.2 4.9 V Temperature coefficient of VF IF = 100 mA TKVF - 1.6 mV/K Reverse current VR = 5 V IR 100 µA Junction capacitance VR = 0 V, f = 1 MHz, E = 0 Cj 20 pF Temperature coefficient of φ e IF = 100 mA TK φ e - 0.7 %/K Angle of half intensity ϕ ± 20 deg Peak wavelength IF = 100 mA λ p 875 nm Spectral bandwidth IF = 100 mA Δλ 80 nm Temperature coefficient of λ p IF = 100 mA TK λ p 0.2 nm/K Rise time IF = 100 mA tr 600 ns IF = 1.5 A tr 300 ns Fall time IF = 100 mA tf 600 ns IF = 1.5 A tf 300 ns Virtual source diameter d 1.8 mm TYPE DEDICATED CHARACTERISTICS PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Radiant intensity IF = 100 mA, tp = 20 ms TSHA4400 Ie 12 20 60 mW/sr TSHA4401 Ie 16 30 60 mW/sr IF = 1.5 mA, tp = 100 µs TSHA4400 Ie 140 240 mW/sr TSHA4401 Ie 190 360 mW/sr Radiant power IF = 100 mA, tp = 20 ms TSHA4400 φ e 20 mW TSHA4401 φ e 24 mW |
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