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HZU13G Datasheet(PDF) 2 Page - Renesas Technology Corp |
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HZU13G Datasheet(HTML) 2 Page - Renesas Technology Corp |
2 / 5 page HZU-G Series Rev.3.00 Jun 08, 2006 page 2 of 4 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Power dissipation Pd * 200 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note: See Fig2. Electrical Characteristics (Ta = 25 °C) Zener Voltage Reverse Current Dynamic Resistance ESD-Capability * 2 VZ (V) * 1 Test Condition IR ( µA) Test Condition rd ( Ω) Test Condition — (kV) * 2 Type No. Min Max IZ (mA) Max VR (V) Max IZ (mA) Min HZU5.1G 4.84 5.37 5 5 1.5 130 5 30 HZU5.6G 5.31 5.92 5 5 2.5 80 5 30 HZU6.2G 5.86 6.53 5 2 3.0 50 5 30 HZU6.8G 6.47 7.14 5 2 3.5 30 5 30 HZU7.5G 7.06 7.84 5 2 4.0 30 5 30 HZU8.2G 7.76 8.64 5 2 5.0 30 5 30 HZU9.1G 8.56 9.55 5 2 6.0 30 5 30 HZU10G 9.45 10.55 5 2 7.0 30 5 30 HZU12G 11.42 12.60 5 2 9.0 35 5 30 HZU13G 12.47 13.96 5 2 10.0 35 5 30 Notes: 1. Tested with pulse (Pw = 40 ms). 2. C =150 pF, R = 330 Ω, Both forward and reverse direction 10 pulse Failure criterion ; According to IR spec Mark Code Type No. Mark No. HZU5.1G 51 HZU5.6G 56 HZU6.2G 62 HZU6.8G 68 HZU7.5G 75 HZU8.2G 82 HZU9.1G 91 HZU10G 10 HZU12G 12 HZU13G 13 |
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