Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

TSFF5210 Datasheet(PDF) 1 Page - Vishay Siliconix

Part # TSFF5210
Description  High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
Download  5 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSFF5210 Datasheet(HTML) 1 Page - Vishay Siliconix

  TSFF5210_08 Datasheet HTML 1Page - Vishay Siliconix TSFF5210_08 Datasheet HTML 2Page - Vishay Siliconix TSFF5210_08 Datasheet HTML 3Page - Vishay Siliconix TSFF5210_08 Datasheet HTML 4Page - Vishay Siliconix TSFF5210_08 Datasheet HTML 5Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 1 / 5 page
background image
Document Number: 81090
For technical questions, contact: emittertechsupport@vishay.com
www.vishay.com
Rev. 1.6, 04-Aug-08
131
High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm,
GaAlAs Double Hetero
TSFF5210
Vishay Semiconductors
DESCRIPTION
TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1 3/4
• Dimensions (in mm):
∅ 5
• Leads with stand-off
• Peak wavelength:
λ
p = 870 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity:
ϕ = ± 10°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: fc = 24 MHz
• Good spectral matching with Si photodetectors
• Lead
(Pb)-free
component
in
accordance
with
RoHS 2002/95/EC and WEEE 2002/96/EC
APPLICATIONS
• Infrared video data transmission between camcorder and
TV set
• Free air data transmission systems with high modulation
frequencies or high data transmission rate requirements
• Smoke-automatic fire detectors
Note
Test conditions see table “Basic Characteristics”
Note
MOQ: minimum order quantity
94 8390
PRODUCT SUMMARY
COMPONENT
Ie (mW/sr)
ϕ (deg)
λ
P (nm)
tr (ns)
TSFF5210
180
± 10
870
15
ORDERING INFORMATION
ORDERING CODE
PACKAGING
REMARKS
PACKAGE FORM
TSFF5210
Bulk
MOQ: 4000 pcs, 4000 pcs/bulk
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Reverse voltage
VR
5V
Forward current
IF
100
mA
Peak forward current
tp/T = 0.5, tp = 100 µs
IFM
200
mA
Surge forward current
tp = 100 µs
IFSM
1A
Power dissipation
PV
180
mW


Similar Part No. - TSFF5210_08

ManufacturerPart #DatasheetDescription
logo
Vishay Siliconix
TSFF5210 VISHAY-TSFF5210_09 Datasheet
111Kb / 5P
   High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Rev. 1.7, 29-Jun-09
More results

Similar Description - TSFF5210_08

ManufacturerPart #DatasheetDescription
logo
Vishay Siliconix
TSFF5410 VISHAY-TSFF5410_08 Datasheet
109Kb / 5P
   High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
Rev. 1.6, 21-Jul-08
TSFF5510 VISHAY-TSFF5510_08 Datasheet
108Kb / 5P
   High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
Rev. 1.1, 16-Sep-08
VSMF4710 VISHAY-VSMF4710 Datasheet
136Kb / 6P
   High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
Rev. 1.2, 04-Sep-08
TSFF6210 VISHAY-TSFF6210 Datasheet
118Kb / 5P
   High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
Rev. 1.0, 05-Sep-08
VSMF4720 VISHAY-VSMF4720 Datasheet
137Kb / 6P
   High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero
Rev. 1.0, 05-Sep-08
TSMF3710 VISHAY-TSMF3710 Datasheet
129Kb / 8P
   High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Rev. 1.3, 21-Feb-07
TSFF5510 VISHAY-TSFF5510 Datasheet
106Kb / 6P
   High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
Rev. 1.0, 07-Feb-08
TSFF6210 VISHAY-TSFF6210_V01 Datasheet
108Kb / 5P
   High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
01-Jan-2022
VSMF4720 VISHAY-VSMF4720_V01 Datasheet
143Kb / 6P
   High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
01-Jan-2022
TSFF5210 VISHAY-TSFF5210_V02 Datasheet
112Kb / 5P
   High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
01-Jan-2023
More results


Html Pages

1 2 3 4 5


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com