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TSDF1220RW Datasheet(PDF) 2 Page - Vishay Siliconix |
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TSDF1220RW Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page www.vishay.com 2 Document Number 85066 Rev. 1.8, 08-Sep-08 TSDF1220 / 1220R / 1220W / 1220RW Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Maximum Thermal Resistance 1) on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Electrical AC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Value Unit Collector-base voltage VCBO 9V Collector-emitter voltage VCEO 6V Emitter-base voltage VEBO 2V Collector current IC 40 mA Total power dissipation Tamb ≤ 60 °C Ptot 200 mW Junction temperature Tj 150 °C Storage temperature range Tstg - 65 to + 150 °C Parameter Test condition Symbol Value Unit Junction to ambient air 1) RthJA 450 K/W Parameter Test condition Symbol Min Typ. Max Unit Collector-emitter cut-off current VCE = 12 V, VBE = 0 ICES 100 μA Collector-base cut-off current VCB = 10 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 1 V, IC = 0 IEBO 2 μA Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 6V Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA VCEsat 0.1 0.5 V DC forward current transfer ratio VCE = 5 V, IC = 20 mA hFE 50 100 150 Parameter Test condition Symbol Min Typ. Max Unit Transition frequency VCE = 5 V, IC = 20 mA, f = 1 GHz fT 12 GHz Collector-base capacitance VCB = 1 V, f = 1 MHz Ccb 0.3 pF Collector-emitter capacitance VCE = 1 V, f = 1 MHz Cce 0.35 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.5 pF Noise figure VCE = 5 V, IC = 3 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz F1.2 dB Power gain VCE = 5 V, IC = 20 mA, ZS = ZSopt, ZL = 50 Ω, f = 2 GHz Gpe 14 dB Transducer gain VCE = 5 V, IC = 20 mA, Z0 = 50 Ω, f = 2 GHz |S21e| 2 12.5 dB Third order intercept point at output VCE = 5 V, IC = 20 mA, f = 2 GHz IP3 22 dBm |
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