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TCET1106 Datasheet(PDF) 4 Page - Vishay Siliconix |
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TCET1106 Datasheet(HTML) 4 Page - Vishay Siliconix |
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4 / 10 page  Document Number: 83503 For technical questions, contact: optocoupler.answers@vishay.com www.vishay.com Rev. 2.2, 16-May-08 813 TCET1100/TCET1100G Optocoupler, Phototransistor Output, High Temperarure Vishay Semiconductors Note According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits. CURRENT TRANSFER RATIO PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT IC/IF VCE = 5 V, IF = 1 mA TCET1101 TCET1101G CTR 13 30 % TCET1102 TCET1102G CTR 22 45 % TCET1103 TCET1103G CTR 34 70 % TCET1104 TCET1104G CTR 56 90 % VCE = 5 V, IF = 5 mA TCET1100 TCET1100G CTR 50 600 % TCET1105 TCET1105G CTR 50 150 % TCET1106 TCET1106G CTR 100 300 % TCET1107 TCET1107G CTR 80 160 % TCET1108 TCET1108G CTR 130 260 % TCET1109 TCET1109G CTR 200 400 % VCE = 5 V, IF = 10 mA TCET1101 TCET1101G CTR 40 80 % TCET1102 TCET1102G CTR 63 125 % TCET1103 TCET1103G CTR 100 200 % TCET1104 TCET1104G CTR 160 320 % MAXIMUM SAFETY RATINGS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward current IF 130 mA OUTPUT Power dissipation Pdiss 265 mW COUPLER Rated impulse voltage VIOTM 8kV Safety temperature Tsi 150 °C INSULATION RATED PARAMETERS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT Partial discharge test voltage - routine test 100 %, ttest = 1 s Vpd 1.6 kV Partial discharge test voltage - lot test (sample test) tTr = 60 s, ttest = 10 s, (see figure 2) VIOTM 8kV Vpd 1.3 kV Insulation resistance VIO = 500 V RIO 1012 Ω VIO = 500 V, Tamb = 100 °C RIO 1011 Ω VIO = 500 V, Tamb = 150 °C (construction test only) RIO 109 Ω |
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