SI5903DC_08 datasheet(2/5 Pages) VISHAY

Part #	SI5903DC

Description	Dual P-Channel 2.5-V (G-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si5903DC

Vishay Siliconix

www.vishay.com

2-2

Document Number: 71054

S-21251—Rev. B, 05-Aug-02

SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Static

Gate Threshold Voltage

VGS(th)

VDS =VGS,ID = --250 mA

--0.6

V

Gate-Body Leakage

IGSS

VDS =0 V, VGS = 12 V

100

nA

Zero Gate Voltage Drain Current

IDSS

VDS =--16 V, VGS =0 V

--1

mA

Zero Gate Voltage Drain Current

IDSS

VDS =--16 V, VGS =0 V, TJ =85_C

--5

mA

On-State Drain Currenta

ID(on)

VDS  --5 V, VGS =--4.5 V

--10

A

VGS =--4.5 V, ID =--2.1 A

0.130

0.155

Drain-Source On-State Resistancea

rDS(on)

VGS =--3.6 V, ID =--2.0 A

0.150

0.180

Ω

DS(on)

VGS =--2.5 V, ID =--1.7 A

0.215

0.260

Forward Transconductancea

gfs

VDS =--10 V, ID =--2.1 A

5

S

Diode Forward Voltagea

VSD

IS =--0.9 A, VGS =0 V

--0.8

--1.2

V

Dynamicb

Total Gate Charge

Qg

3

6

Gate-Source Charge

Qgs

VDS =--10 V, VGS =--4.5 V, ID =--2.1 A

0.9

nC

Gate-Drain Charge

Qgd

0.6

Turn-On Delay Time

td(on)

13

20

Rise Time

tr

VDD =--10 V,RL =10 Ω

35

55

Turn-Off Delay Time

td(off)

VDD = --10 V, RL = 10 Ω

ID ≅ --1 A, VGEN =--4.5 V, RG =6 Ω

25

40

ns

Fall Time

tf

25

40

Source-Drain Reverse Recovery Time

trr

IF = --0.9 A, di/dt = 100 A/ms

40

80

Notes

a.

Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

2

4

6

8

10

0.0

0.5

1.0

1.5

2.0

2.5

3.0

VGS = 5 thru4V

TC =--55_C

125_C

25_C

Output Characteristics

Transfer Characteristics

VDS -- Drain-to-Source Voltage (V)

VGS -- Gate-to-Source Voltage (V)

1.5 V

2V

2.5 V

3V

3.5 V

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