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SI5855CDC-T1-E3 Datasheet(PDF) 8 Page - Vishay Siliconix |
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SI5855CDC-T1-E3 Datasheet(HTML) 8 Page - Vishay Siliconix |
8 / 9 page www.vishay.com 8 Document Number: 68910 S-82299-Rev. A, 22-Sep-08 Vishay Siliconix Si5855CDC SCHOTTKY TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?68910. Capacitance 0 100 200 300 400 500 600 04 8 12 16 20 VKA - Reverse Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient Square Wave Pulse Duration (s) 2 1 0.1 0.01 10-3 10-2 1 10 600 10-1 10-4 Duty Cycle = 0.5 0.2 0.1 0.05 0.02 Single Pulse 100 1. Duty Cycle, D = 2. Per Unit Base = R thJA = 95 °C/W 3. T JM - TA = PDMZthJA(t) t1 t2 t1 t2 Notes: 4. Surface Mounted PDM Normalized Thermal Transient Impedance, Junction-to-Foot 10-3 10-2 110 10-1 10-4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 Single Pulse Duty Cycle = 0.5 Square Wave Pulse Duration (s) |
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