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UG10FCT Datasheet(PDF) 1 Page - Vishay Siliconix |
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UG10FCT Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 5 page UG(F,B)10FCT & UG(F,B)10GCT, BYT28(F,B)-300 & BYT28(F,B)-400 Vishay General Semiconductor Document Number: 88552 Revision: 06-Nov-07 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Dual Common-Cathode Ultrafast Soft Recovery Rectifier FEATURES • Glass passivated chip junction • Ultrafast recovery time • Low switching losses, high efficiency • Low forward voltage drop • High forward surge capability • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder dip 260 °C, 40 s (for TO-220AB and ITO-220AB package) • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, inverters, freewheeling diodes, dc-to-dc converters, and other power switching application. MECHANICAL DATA Case: TO-220AB, ITO-220AB, TO-263AB Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix for consumer grade, meets JESD 201 class 1A whisker test, HE3 suffix for high reliability grade (AEC Q101 qualified), meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum PRIMARY CHARACTERISTICS IF(AV) 5 A x 2 VRRM 300 V, 400 V IFSM 60 A trr 35 ns VF 1.05 V TJ max. 150 °C CASE PIN 2 PIN 1 PIN 3 TO-220AB BYT28, UG10 Series ITO-220AB BYT28F, UGF10 Series BYT28B, UGB10 Series PIN 1 PIN 2 K HEATSINK 1 2 3 1 2 K PIN 2 PIN 1 PIN 3 TO-263AB 1 2 3 MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL BYT28-300 UG10FCT BYT28-400 UG10GCT UNIT Maximum repetitive peak reverse voltage VRRM 300 400 V Maximum working reverse voltage VRWM 300 400 V Maximum RMS voltage VRMS 210 280 Maximum DC blocking voltage VDC 300 400 V Maximum average forward rectified current at TC = 100 °C total device per diode IF(AV) 10 5.0 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 60 A Operating junction and storage temperature range TJ, TSTG - 40 to + 150 °C Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min VAC 1500 V |
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