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BRT23 Datasheet(PDF) 2 Page - Vishay Siliconix

Part # BRT23
Description  Optocoupler, Phototriac Output, Zero Crossing
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

BRT23 Datasheet(HTML) 2 Page - Vishay Siliconix

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www.vishay.com
For technical questions, contact: optocouplers.answers@vishay.com
Document Number: 83690
194
Rev. 1.5, 07-May-08
BRT21/BRT22/BRT23
Vishay Semiconductors
Optocoupler, Phototriac Output,
Zero Crossing
Notes
(1) Tamb = 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through
hole devices (DIP).
ABSOLUTE MAXIMUM RATINGS (1)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
IR = 10 µA
VR
6.0
V
Forward current
IF
60
mA
Surge current
IFSM
2.5
A
Power dissipation
Pdiss
100
mW
Derate from 25 °C
1.33
mW/°C
OUTPUT
Peak off-state voltage
ID(RMS) = 70 µA
BRT21
VDM
400
V
BRT22
VDM
600
V
BRT23
VDM
800
V
RMS on-state current
ITM
300
mA
Single cycle surge current
3.0
A
Power dissipation
Pdiss
600
mW
Derate from 25 °C
6.6
mW/°C
COUPLER
Isolation test voltage
(between emitter and detector, climate
per DIN 500414, part 2, Nov. 74)
t = 1.0 min
VISO
5300
VRMS
Pollution degree (DIN VDE 0109)
2
Creepage distance
≥ 7.0
mm
Clearance distance
≥ 7.0
mm
Comparative tracking index per
DIN IEC 112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
CTI
≥ 175
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
≥ 1012
Ω
VIO = 500 V, Tamb = 100 °C
RIO
≥ 1011
Ω
Storage temperature range
Tstg
- 40 to + 100
°C
Ambient temperature range
Tamb
- 40 to + 100
°C
Soldering temperature (2)
max.
≤ 10 s dip soldering
≥ 0.5 mm from case bottom
Tsld
260
°C
ELECTRICAL CHARACTERISTICS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 10 mA
VF
1.16
1.35
V
Reverse current
VR = 6 V
IR
0.1
10
µA
Capacitance
f = 1 MHz, VF = 0 V
CO
25
pF
Thermal resistance, junction to
ambient
RthJA
750
K/W


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