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BRT23 Datasheet(PDF) 2 Page - Vishay Siliconix |
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BRT23 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com For technical questions, contact: optocouplers.answers@vishay.com Document Number: 83690 194 Rev. 1.5, 07-May-08 BRT21/BRT22/BRT23 Vishay Semiconductors Optocoupler, Phototriac Output, Zero Crossing Notes (1) Tamb = 25 °C, unless otherwise specified. Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. (2) Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through hole devices (DIP). ABSOLUTE MAXIMUM RATINGS (1) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Reverse voltage IR = 10 µA VR 6.0 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss 100 mW Derate from 25 °C 1.33 mW/°C OUTPUT Peak off-state voltage ID(RMS) = 70 µA BRT21 VDM 400 V BRT22 VDM 600 V BRT23 VDM 800 V RMS on-state current ITM 300 mA Single cycle surge current 3.0 A Power dissipation Pdiss 600 mW Derate from 25 °C 6.6 mW/°C COUPLER Isolation test voltage (between emitter and detector, climate per DIN 500414, part 2, Nov. 74) t = 1.0 min VISO 5300 VRMS Pollution degree (DIN VDE 0109) 2 Creepage distance ≥ 7.0 mm Clearance distance ≥ 7.0 mm Comparative tracking index per DIN IEC 112/VDE 0303 part 1, group IIIa per DIN VDE 6110 CTI ≥ 175 Isolation resistance VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 40 to + 100 °C Ambient temperature range Tamb - 40 to + 100 °C Soldering temperature (2) max. ≤ 10 s dip soldering ≥ 0.5 mm from case bottom Tsld 260 °C ELECTRICAL CHARACTERISTICS PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 10 mA VF 1.16 1.35 V Reverse current VR = 6 V IR 0.1 10 µA Capacitance f = 1 MHz, VF = 0 V CO 25 pF Thermal resistance, junction to ambient RthJA 750 K/W |
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