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SI5463EDC Datasheet(PDF) 2 Page - Vishay Siliconix |
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SI5463EDC Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 6 page Si5463EDC Vishay Siliconix www.vishay.com 2-2 Document Number: 71364 S-21251—Rev. C, 05-Aug-02 SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage VGS(th) VDS =VGS,ID = --250 mA --0.45 V Gate-Body Leakage IGSS VDS =0 V, VGS = 4.5 V 1.5 Zero Gate Voltage Drain Current IDSS VDS =--16 V, VGS =0 V --1 mA Zero Gate Voltage Drain Current IDSS VDS =--16 V, VGS =0 V, TJ =85_C --5 On-State Drain Currenta ID(on) VDS --5 V, VGS =--4.5 V --15 A VGS =--4.5 V, ID =--4.0 A 0.051 0.062 Drain Source On State Resistancea rDS( ) VGS =--3.6 V, ID =--3.5 A 0.056 0.068 Ω Drain-Source On-State Resistancea rDS(on) VGS =--2.5 V, ID =--3.0 A 0.070 0.085 Ω VGS =--1.8 V, ID =--1.5 A 0.100 0.120 Forward Transconductancea gfs VDS =--5 V, ID =--4.0 A 10 S Diode Forward Voltagea VSD IS =--1.0 A, VGS =0 V --0.75 --1.2 V Dynamicb Total Gate Charge Qg 9.7 15 Gate-Source Charge Qgs VDS =--10 V, VGS =--4.5 V, ID =--4.0 A 2.7 nC Gate-Drain Charge Qgd 1.4 Turn-On Delay Time td(on) 1.85 2.5 Rise Time tr VDD =--10 V,RL =10 Ω 3.2 4.5 ms Turn-Off Delay Time td(off) VDD = --10 V, RL = 10 Ω ID ≅ --1 A, VGEN =--4.5 V, RG =6 Ω 1.9 2.5 ms Fall Time tf 3.2 4.5 Notes a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0 3 6 9 12 15 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 3 6 9 12 15 02468 10 VGS = 4.5 thru 3 V TC =--55_C 125_C 1.5 V 25_C Output Characteristics Transfer Characteristics VDS -- Drain-to-Source Voltage (V) VGS -- Gate-to-Source Voltage (V) 1V,0.5 V 2.5 V 2V |
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