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SI3499DV-T1-E3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI3499DV-T1-E3 Datasheet(HTML) 3 Page - Vishay Siliconix |
3 / 6 page Si3499DV Vishay Siliconix New Product Document Number: 73138 Pending—Rev. A, 18-Oct-04 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 500 1000 1500 2000 2500 3000 3500 012 34 56 78 0.6 0.8 1.0 1.2 1.4 1.6 −50 −25 0 25 50 75 100 125 150 0 1 2 3 4 5 6 0 6 12 18 24 30 36 0.00 0.02 0.04 0.06 0.08 0.10 0 5 10 15 20 25 30 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 4 V ID = 7 A ID − Drain Current (A) VGS = 4.5 V ID = 7 A VGS = 1.5 V VGS = 2.5 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.00 0.02 0.04 0.06 0.08 0.10 0 1234 5 ID = 7 A 30 10 0.1 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 4.5 V TJ = 150_C TJ = 25_C VGS = 1.8 V 1 |
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