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SI2309CDS-T1-GE3 Datasheet(PDF) 3 Page - Vishay Siliconix |
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SI2309CDS-T1-GE3 Datasheet(HTML) 3 Page - Vishay Siliconix |
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3 / 6 page  Document Number: 68980 S-82584-Rev. A, 27-Oct-08 www.vishay.com 3 Vishay Siliconix Si2309CDS New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Output Characteristics On-Resistance vs. Drain Current and Gate Voltage Gate Charge 0 2 4 6 8 0 1234 5 VGS =10thru 5 V VGS =3 V VGS =4 V VDS - Drain-to-Source Voltage (V) 0.0 0.2 0.4 0.6 0.8 024 6 8 VGS =10 V VGS =4.5 V ID - Drain Current (A) 0 2 4 6 8 10 0 1234 5 VDS =45 V ID =1.25A VDS =30 V VDS =15 V Qg - Total Gate Charge (nC) Transfer Characteristics Capacitance On-Resistance vs. Junction Temperature 0.0 0.5 1.0 1.5 2.0 01 2 3 45 TC = 25 °C TC = 125 °C TC = - 55 °C VGS - Gate-to-Source Voltage (V) Crss 0 70 140 210 280 350 0 1530 4560 Ciss Coss VDS - Drain-to-Source Voltage (V) 0.5 0.8 1.1 1.4 1.7 2.0 - 50 - 25 0 25 50 75 100 125 150 ID =1.25A VGS =4.5 V VGS =10 V TJ -Junction Temperature (°C) |
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