SI1912EDH_08 datasheet(1/6 Pages) VISHAY

Part #	SI1912EDH

Description	Dual N-Channel 20-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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FEATURES

D TrenchFETr Power MOSFETS: 1.8-V Rated

D ESD Protected: 2000 V

D Thermally Enhanced SC-70 Package

APPLICATIONS

D Load Switching

D PA Switch

D Level Switch

Si1912EDH

Vishay Siliconix

New Product

Document Number: 71408

S-03176—Rev. A, 05-Mar-01

www.vishay.com

1

Dual N-Channel 20-V (D-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

0.280 @ VGS = 4.5 V

1.28

20

0.360 @ VGS = 2.5 V

1.13

0.450 @ VGS = 1.8 V

1.0

Marking Code

CA

XX

Lot Traceability

and Date Code

Part # Code

D

S

G

1 k

W

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

S1

G1

D2

D1

G2

S2

D

S

G

1 k

W

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

20

Gate-Source Voltage

VGS

"12

V

_ a

TA = 25_C

1.28

1.13

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

0.92

0.81

Pulsed Drain Current

IDM

4

A

Continuous Diode Current (Diode Conduction)a

IS

0.61

0.48

TA = 25_C

0.74

0.57

Maximum Power Dissipationa

TA = 85_C

PD

0.38

0.30

W

Operating Junction and Storage Temperature Range

TJ, Tstg

–55 to 150

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

v 5 sec

130

170

Maximum Junction-to-Ambienta

Steady State

RthJA

170

220

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

80

100

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

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