SI1073X-T1-GE3 datasheet(3/6 Pages) VISHAY

Part #	SI1073X-T1-GE3

Description	P-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Document Number: 74285

S-82617-Rev. C, 03-Nov-08

www.vishay.com

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Vishay Siliconix

Si1073X

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TYPICAL CHARACTERISTICS TA = 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Qg - Gate Charge

0

2

4

6

8

0.0

0.6

1.2

1.8

2.4

3.0

VDS - Drain-to-Source Voltage (V)

VGS = 10 thru 5 V

VGS = 3 V

VGS = 4 V

0.00

0.08

0.16

0.24

0.32

0.40

0246

8

ID - Drain Current (A)

VGS = 10 V

VGS = 4.5 V

0

2

4

6

8

10

012

34

567

Qg - Total Gate Charge (nC)

ID = 0.94 A

VDS = 15 V

VDS = 24 V

Transfer Characteristics Curves vs. Temp.

Capacitance

On-Resistance vs. Junction Temperature

0

1

2

3

01234

VGS - Gate-to-Source Voltage (V)

TC = 125 °C

25 °C

TC = - 55 °C

0

100

200

300

400

500

0

6

12

18

24

30

VDS - Drain-to-Source Voltage (V)

Coss

Ciss

Crss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

150

TJ - Junction Temperature (°C)

VGS = 4.5 V

ID = 0.83 A

VGS = 10 V

ID = 0.94 A

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